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Misagh Ghezellou
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The effect of annealing, synthesis temperature and structure on photoluminescence properties of Eu-doped ZnO nanorods
M Najafi, H Haratizadeh, M Ghezellou
JOURNAL OF NANOSTRUCTURES 5 (2), 129-135, 2015
332015
Two-emitter multimode cavity quantum electrodynamics in thin-film silicon carbide photonics
DM Lukin, MA Guidry, J Yang, M Ghezellou, S Deb Mishra, H Abe, ...
Physical Review X 13 (1), 011005, 2023
292023
Epitaxial growth of β-Ga2O3 by hot-wall MOCVD
D Gogova, M Ghezellou, DQ Tran, S Richter, A Papamichail, AR Persson, ...
AIP Advances 12 (5), 2022
192022
Optical superradiance of a pair of color centers in an integrated silicon-carbide-on-insulator microresonator
DM Lukin, MA Guidry, J Yang, M Ghezellou, SD Mishra, H Abe, ...
arXiv preprint arXiv:2202.04845, 2022
172022
Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
R Nagy, DBR Dasari, C Babin, D Liu, V Vorobyov, M Niethammer, ...
Applied Physics Letters 118 (14), 2021
152021
The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers
M Ghezellou, P Kumar, ME Bathen, R Karsthof, EÖ Sveinbjörnsson, ...
APL Materials 11 (3), 2023
62023
Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide
P Cilibrizzi, MJ Arshad, B Tissot, NT Son, IG Ivanov, T Astner, P Koller, ...
Nature Communications 14 (1), 8448, 2023
52023
Characterization of single shallow silicon-vacancy centers in
H Singh, MA Hollberg, M Ghezellou, J Ul-Hassan, F Kaiser, D Suter
Physical Review B 107 (13), 134117, 2023
32023
Broadband single-mode planar waveguides in monolithic 4H-SiC
T Bosma, J Hendriks, M Ghezellou, NT Son, J Ul-Hassan, CH van der Wal
Journal of Applied Physics 131 (2), 2022
32022
Influence of Carbon Cap on Self-Diffusion in Silicon Carbide
ME Bathen, M Linnarsson, M Ghezellou, J Ul Hassan, L Vines
Crystals 10 (9), 752, 2020
32020
Novel nanostructures of bromoaluminum phthalocyanine grown by physical vapor phase transport
S Pourteimoor, H Haratizadeh, ME Azim Araghi, M Ghezellou
Journal of Materials Science: Materials in Electronics 29, 16032-16040, 2018
32018
High-Fidelity Optical Readout of a Nuclear-Spin Qubit in Silicon Carbide
E Hesselmeier, P Kuna, W Knolle, F Kaiser, NT Son, M Ghezellou, ...
Physical Review Letters 132 (18), 180804, 2024
22024
Qudit-Based Spectroscopy for Measurement and Control of Nuclear-Spin Qubits in Silicon Carbide
E Hesselmeier, P Kuna, I Takács, V Ivády, W Knolle, NT Son, M Ghezellou, ...
Physical Review Letters 132 (9), 090601, 2024
22024
Measuring nuclear spin qubits by qudit-enhanced spectroscopy in Silicon Carbide
E Hesselmeier, P Kuna, I Takács, V Ivády, W Knolle, M Ghezellou, ...
arXiv preprint arXiv:2310.15557, 2023
22023
The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers
R Karhu, M Ghezellou, J Ul Hassan
physica status solidi (b) 259 (4), 2100512, 2022
22022
Dual configuration of shallow acceptor levels in 4H-SiC
ME Bathen, P Kumar, M Ghezellou, M Belanche, L Vines, J Ul-Hassan, ...
Materials Science in Semiconductor Processing 177, 108360, 2024
12024
Spectral stability of V2 centres in sub-micron 4H-SiC membranes
J Heiler, J Körber, E Hesselmeier, P Kuna, R Stöhr, P Fuchs, M Ghezellou, ...
npj Quantum Materials 9 (1), 34, 2024
12024
Effective uniaxial dielectric function tensor and optical phonons in ()-plane oriented -GaO films with equally-distributed six-fold rotation domains
A Mock, S Richter, A Papamichail, V Stanishev, M Ghezellou, J Ul-Hassan, ...
arXiv preprint arXiv:2404.07300, 2024
2024
Quantum communication networks with defects in silicon carbide
S Ecker, M Fink, T Scheidl, P Sohr, R Ursin, MJ Arshad, C Bonato, ...
arXiv preprint arXiv:2403.03284, 2024
2024
Single telecom-wavelength vanadium quantum emitters in SiC with ultra-narrow inhomogeneous broadening
MJ Arshad, P Cilibrizzi, B Tissot, N Tien Son, I Ivanov, T Astner, P Koller, ...
Bulletin of the American Physical Society, 2024
2024
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