| Characterization of deep and shallow traps in GaN HEMT using multi-frequency CV measurement and pulse-mode voltage stress W Yang, JS Yuan, B Krishnan, P Shea IEEE Transactions on Device and Materials Reliability 19 (2), 350-357, 2019 | 29 | 2019 |
| Experimental investigation of buffer traps physical mechanisms on the gate charge of GaN-on-Si devices under various substrate biases W Yang, JS Yuan Applied Physics Letters 116 (8), 2020 | 16 | 2020 |
| Low-Side GaN Power Device Dynamic Ron Characteristics Under Different Substrate Biases W Yang, JS Yuan, B Krishnan, P Shea 2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019 | 14 | 2019 |
| Switching loss characterization of GaN-based buck converter under different substrate biases M Safayatullah, W Yang, JS Yuan, B Krishnan 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 9 | 2019 |
| Substrate bias effect on dynamic characteristics of a monolithically integrated GaN half-bridge W Yang, JS Yuan, B Krishnan, AJ Tzou, WK Yeh 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 8 | 2020 |
| CV Measurement under different Frequencies and pulse-mode voltage stress to reveal shallow and deep trap effects of GaN HEMTs W Yang, JS Yuan, B Krishnan, AJ Tzou, WK Yeh 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2018 | 8 | 2018 |
| Effects of heterostructure design on performance for low voltage GaN power HEMTs A Binder, S Khan, W Yang, JS Yuan, B Krishnan, PM Shea ECS Journal of Solid State Science and Technology 8 (2), Q15, 2019 | 7 | 2019 |
| ESD robustness of GaN-on-Si power devices under substrate biases by means of TLP/VFTLP tests W Yang, N Stoll, JS Yuan 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 6 | 2020 |
| ESD Behavior of GaN-on-Si power devices under TLP/VFTLP measurements W Yang, N Stoll, JS Yuan, B Krishnan 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 6 | 2019 |
| Experimental evaluation of time-dependent dielectric breakdown for GaN MIS HEMTs under various substrate biases W Yang, JS Yuan, B Krishnan, P Shea 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 4 | 2019 |
| Negative-bias temperature instability of p-GaN gate GaN-on-Si power devices W Yang, JS Yuan IEEE Transactions on Device and Materials Reliability 22 (2), 217-222, 2022 | 3 | 2022 |
| Substrate bias enhanced trap effects on time-dependent dielectric breakdown of GaN MIS-HEMTs W Yang, JS Yuan IEEE Transactions on Electron Devices 68 (5), 2233-2239, 2021 | 3 | 2021 |
| Investigation of a latch-up immune silicon controlled rectifier for robust ESD application Z Qi, M Qiao, X Zhou, W Yang, D Fang, S Cheng, S Zhang, Z Li, B Zhang 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 3 | 2017 |
| ESD stress effect on failure mechanisms in GaN-on-Si power device W Yang, N Stoll, JS Yuan IEEE Transactions on Device and Materials Reliability 21 (4), 479-485, 2021 | 2 | 2021 |
| Experimental verification of substrate bias effect on the Gate charge for GaN HEMTs W Yang, JS Yuan 2019 Compound Semiconductor Week (CSW), 1-2, 2019 | 2 | 2019 |
| NBTI of buried oxide layer induced degradation for thin layer SOI field pLDMOS X Zhou, M Qiao, W Yang, Y He, Z Wang, Z Li, B Zhang 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 2 | 2016 |
| Reliability and Failure Analysis of GaN-on-Si Power Devices W Yang | | 2021 |
| Back gate induced breakdown mechanisms for thin layer SOI field P-channel LDMOS X Zhou, M Qiao, Y He, W Yang, Z Li, B Zhang Superlattices and Microstructures 89, 216-224, 2016 | | 2016 |
J.S. YuanProfessor of Electrical Engineering, University of Central FloridaVerified email at mail.ucf.edu
