| Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAM S Roy, G Niu, Q Wang, Y Wang, Y Zhang, H Wu, S Zhai, P Shi, S Song, ... ACS applied materials & interfaces 12 (9), 10648-10656, 2020 | 91 | 2020 |
| Interface-engineered reliable HfO 2-based RRAM for synaptic simulation Q Wang, G Niu, S Roy, Y Wang, Y Zhang, H Wu, S Zhai, W Bai, P Shi, ... Journal of Materials Chemistry C 7 (40), 12682-12687, 2019 | 67 | 2019 |
| A robust high-performance electronic synapse based on epitaxial ferroelectric Hf0. 5Zr0. 5O2 films with uniform polarization and high Curie temperature Y Wang, Q Wang, J Zhao, T Niermann, Y Liu, L Dai, K Zheng, Y Sun, ... Applied Materials Today 29, 101587, 2022 | 25 | 2022 |
| Multiwavelength High-Detectivity MoS2 Photodetectors with Schottky Contacts Y Sun, L Jiang, Z Wang, Z Hou, L Dai, Y Wang, J Zhao, YH Xie, L Zhao, ... ACS nano, 2022 | 20 | 2022 |
| Reliable resistive switching of epitaxial single crystalline cubic Y-HfO2 RRAMs with Si as bottom electrodes Y Wang, G Niu, Q Wang, S Roy, L Dai, H Wu, Y Sun, S Song, Z Song, ... Nanotechnology 31 (20), 205203, 2020 | 13 | 2020 |
| Set/Reset Bilaterally Controllable Resistance Switching Ga‐doped Ge2Sb2Te5 Long‐Term Electronic Synapses for Neuromorphic Computing Q Wang, R Luo, Y Wang, W Fang, L Jiang, Y Liu, R Wang, L Dai, J Zhao, ... Advanced Functional Materials 33 (19), 2213296, 2023 | 12 | 2023 |
| Toward van der Waals epitaxy of transferable ferroelectric barium titanate films via a graphene monolayer L Dai, G Niu, J Zhao, H Zhao, Y Liu, Y Wang, Y Zhang, H Wu, L Wang, ... Journal of Materials Chemistry C 8 (10), 3445-3451, 2020 | 11 | 2020 |
| Ultrathin HfO2/Al2O3 bilayer based reliable 1T1R RRAM electronic synapses with low power consumption for neuromorphic computing Q Wang, Y Wang, R Luo, J Wang, L Ji, Z Jiang, C Wenger, Z Song, ... Neuromorphic Computing and Engineering 2 (4), 044012, 2022 | 10 | 2022 |
| High temperature phase transitions in NaNbO3 epitaxial films grown under tensile lattice strain S Bin Anooz, Y Wang, P Petrik, M de Oliveira Guimaraes, M Schmidbauer, ... Applied Physics Letters 120 (20), 202901, 2022 | 6 | 2022 |
| Thickness effect on ferroelectric domain formation in compressively strained epitaxial films Y Wang, S Bin Anooz, G Niu, M Schmidbauer, L Wang, W Ren, ... Physical Review Materials 6 (8), 084413, 2022 | 5 | 2022 |
| Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate Y Sun, G Niu, W Ren, J Zhao, Y Wang, H Wu, L Jiang, L Dai, YH Xie, ... AIP Advances 11 (6), 065229, 2021 | 5 | 2021 |
| Ferroelectric phase transitions in tensile-strained NaNbO3 epitaxial films probed by in situ x-ray diffraction M de Oliveira Guimarães, C Richter, M Hanke, S Bin Anooz, Y Wang, ... Journal of Applied Physics 132 (15), 2022 | 1 | 2022 |
| Long‐term and short‐term plasticity independently mimicked in highly reliable Ru‐doped Ge2Sb2Te5 electronic synapses Q Wang, Y Wang, Y Wang, L Jiang, J Zhao, Z Song, J Bi, L Zhao, Z Jiang, ... InfoMat, e12543, 2024 | | 2024 |
| Ambipolar MoS2 Field Effect Transistors with Negative Photoconductivity and High Responsivity Using an Ultrathin Epitaxial Ferroelectric Gate Y Sun, Y Wang, Z Wang, L Jiang, Z Hou, L Dai, J Zhao, YH Xie, L Zhao, ... Advanced Functional Materials, 2402185, 2024 | | 2024 |
| 3D printed piezoelectric focused element for ultrasonic transducer K Zheng, Y Quan, D Ding, J Zhuang, Y Wang, Z Wang, J Zhao, C Fei, ... Ceramics International, 2024 | | 2024 |
Gang NiuXi'an Jiaotong UniversityVerified email at mail.xjtu.edu.cn
