| Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High C HCS/C LCS, Fast Speed, and Long Retention Z Zhou, L Jiao, J Zhou, Z Zheng, Y Chen, K Han, Y Kang, X Gong 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 13 | 2022 |
| Al-doped and Deposition Temperature-engineered HfO2 Near Morphotropic Phase Boundary with Record Dielectric Permittivity (~68) J Zhou, Z Zhou, L Jiao, X Wang, Y Kang, H Wang, K Han, Z Zheng, ... 2021 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4, 2021 | 11 | 2021 |
| A 6.5 nm thick anti-ferroelectric HfAlO x film for energy storage devices with a high density of 63.7 J cm− 3 J Zhou, Y Kang, X Wang, Z Zhou, H Ni, L Jiao, Z Zheng, X Gong Journal of Physics D: Applied Physics 55 (1), 014003, 2021 | 11 | 2021 |
| Time-dependent Landau-Ginzburg equation-based ferroelectric tunnel junction modeling with dynamic response and multi-domain characteristics Z Zhou, L Jiao, J Zhou, Q Kong, S Luo, C Sun, Z Zheng, X Wang, D Zhang, ... IEEE Electron Device Letters 43 (1), 158-161, 2021 | 9 | 2021 |
| New insights into the impact of hydrogen evolution on the reliability of IGZO FETs: Experiment and modeling Q Kong, G Liu, C Sun, Z Zheng, D Zhang, J Zhang, H Xu, L Liu, Z Zhou, ... 2022 International Electron Devices Meeting (IEDM), 30.2. 1-30.2. 4, 2022 | 8 | 2022 |
| Inversion-type ferroelectric capacitive memory and its 1-kbit crossbar array Z Zhou, L Jiao, J Zhou, Z Zheng, Y Chen, K Han, Y Kang, X Gong IEEE Transactions on Electron Devices 70 (4), 1641-1647, 2023 | 6 | 2023 |
| Novel a-IGZO anti-ferroelectric FET LIF neuron with co-integrated ferroelectric FET synapse for spiking neural networks C Sun, X Wang, H Xu, J Zhang, Z Zheng, Q Kong, Y Kang, K Han, L Jiao, ... 2022 International Electron Devices Meeting (IEDM), 2.1. 1-2.1. 4, 2022 | 5 | 2022 |
| Boosting the memory window of the BEOL-compatible MFMIS ferroelectric/anti-ferroelectric FETs by charge injection Z Zheng, C Sun, L Jiao, D Zhang, Z Zhou, X Wang, G Liu, Q Kong, Y Chen, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 5 | 2022 |
| BEOL-compatible Ta/HZO/W ferroelectric tunnel junction with low operating voltage targeting for low power application L Jiao, Z Zhou, Z Zheng, Y Kang, C Sun, Q Kong, X Wang, D Zhang, G Liu, ... 2022 International Conference on IC Design and Technology (ICICDT), 5-7, 2022 | 4 | 2022 |
| Ferroelectric-semiconductor tunnel junction with ultrathin semiconductor electrode engineering Q Yan, J Zhou, W Feng, N Liu, S Zheng, L Jiao, J Liang, Y Liu, Y Hao, ... IEEE Electron Device Letters 43 (10), 1764-1767, 2022 | 4 | 2022 |
| Grain size reduction of ferroelectric HZO enabled by a novel solid phase epitaxy (SPE) approach: Working principle, experimental demonstration, and theoretical understanding D Zhang, J Wu, Q Kong, Z Zhou, L Liu, K Han, C Sun, X Wang, G Liu, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 3 | 2023 |
| Deep insights into the Interplay of Polarization Switching, Charge Trapping, and Soft Breakdown in Metal-Ferroelectric-Metal-Insulator-Semiconductor Structure: Experiment and … X Wang, C Sun, Z Zheng, L Jiao, Z Zhou, D Zhang, G Liu, Q Kong, ... 2022 International Electron Devices Meeting (IEDM), 13.3. 1-13.3. 4, 2022 | 3 | 2022 |
| Understanding Positive Bias Stability of a-InGaZnO Thin Film Transistors with HfO2 Gate Dielectric using Fast Measurement Techniques Q Kong, C Sun, Z Zheng, Z Zhou, L Jiao, K Han, Y Kang, J Zhang, H Xu, ... 2022 International Symposium on VLSI Technology, Systems and Applications …, 2022 | 3 | 2022 |
| First study of the charge trapping aggravation induced by anti-ferroelectric switching in the MFIS stack Z Zhou, L Jiao, Z Zheng, X Wang, D Zhang, K Ni, X Gong 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 2 | 2023 |
| Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors Q Kong, L Liu, Z Zheng, C Sun, Z Zhou, L Jiao, A Kumar, R Shao, J Zhang, ... IEEE Transactions on Electron Devices 70 (4), 2059-2066, 2023 | 2 | 2023 |
| First demonstration of BEOL-compatible 3D Fin-gate oxide semiconductor Fe-FETs Q Kong, L Liu, Z Zheng, C Sun, A Kumar, R Shao, Z Zhou, L Jiao, J Zhang, ... 2022 International Electron Devices Meeting (IEDM), 12.3. 1-12.3. 4, 2022 | 2 | 2022 |
| First Si-waveguide-integrated InGaAs/InAlAs avalanche photodiodes on SOI platform J Zhang, H Xu, KH Tan, S Wicaksono, Q Kong, G Zhang, Y Chen, C Sun, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 2 | 2022 |
| BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs—Part I: Experimental Results With Boosted Memory Window Z Zheng, L Jiao, D Zhang, C Sun, Z Zhou, X Wang, G Liu, Q Kong, Y Chen, ... IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices L Jiao, K Han, Z Zhou, Z Zheng, X Wang, Q Kong, Y Kang, J Zhang, L Liu, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 1 | 2023 |
| First Demonstration of Work Function-Engineered BEOL-Compatible IGZO Non-Volatile MFMIS AFeFETs and Their Co-Integration with Volatile-AFeFETs Z Zheng, L Jiao, Z Zhou, Y Wang, L Liu, K Han, C Sun, Q Kong, D Zhang, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 1 | 2023 |
Xiao GongNational University of SingaporeVerified email at nus.edu.sg
