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Wei Jia Zhang
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Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes
JB You, XW Zhang, SG Zhang, JX Wang, ZG Yin, HR Tan, WJ Zhang, ...
Applied Physics Letters 96 (20), 2010
1012010
DHODH inhibitors sensitize to ferroptosis by FSP1 inhibition
E Mishima, T Nakamura, J Zheng, W Zhang, ASD Mourão, P Sennhenn, ...
Nature 619 (7968), E9-E18, 2023
372023
A smart gate driver IC for GaN power HEMTs with dynamic ringing suppression
WJ Zhang, J Yu, WT Cui, Y Leng, J Liang, YT Hsieh, HH Tsai, YZ Juang, ...
IEEE Transactions on Power Electronics 36 (12), 14119-14132, 2021
322021
A smart IGBT gate driver IC with temperature compensated collector current sensing
J Chen, WJ Zhang, A Shorten, J Yu, M Sasaki, T Kawashima, H Nishio, ...
IEEE Transactions on Power Electronics 34 (5), 4613-4627, 2018
312018
A smart gate driver IC for GaN power transistors
J Yu, WJ Zhang, A Shorten, R Li, WT Ng
2018 ieee 30th international symposium on power semiconductor devices and …, 2018
242018
A segmented gate driver for E-mode GaN HEMTs with simple driving strength pattern control
WJ Zhang, J Yu, Y Leng, WT Cui, GQ Deng, WT Ng
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
172020
A TCAD Study on Lateral Power MOSFET With Dual Conduction Paths and High- Passivation
J Cheng, H Huang, B Yi, W Zhang, WT Ng
IEEE Electron Device Letters 41 (2), 260-263, 2019
162019
A segmented output stage H-bridge IC with tunable gate driver
JS Yu, WJ Zhang, WT Ng
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014
152014
Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review
N Kim, J Yu, W Zhang, R Li, M Wang, WT Ng
Journal of Electronic Materials 49, 6829-6843, 2020
142020
An integrated gate driver for E-mode GaN HEMTs with active clamping for reverse conduction detection
WJ Zhang, Y Leng, J Yu, YS Lu, CY Cheng, WT Ng
2019 31st international symposium on power semiconductor devices and ics …, 2019
142019
A smart gate driver for SiC power MOSFETS with aging compensation and ringing suppression
M Wang, WJ Zhang, J Liang, WT Cui, WT Ng, H Nishio, H Sumida, ...
2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021
102021
A dynamic gate driver IC with automated pattern optimization for SiC power MOSFETs
WT Cui, WJ Zhang, JY Liang, H Nishio, H Sumida, H Nakajima, YT Hsieh, ...
2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022
92022
A unified model for vertical doped and polarized superjunction GaN devices
H Huang, J Cheng, B Yi, W Zhang, WT Ng
Applied Physics Letters 116 (10), 2020
92020
Design trends in smart gate driver ICs for power GaN HEMTs
WT Ng, J Yu, M Wang, R Li, W Zhang
2018 14th ieee international conference on solid-state and integrated …, 2018
82018
Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit
WJ Zhang, Y Leng, J Yu, X Jiang, CY Cheng, WT Ng
IET Power Electronics 12 (15), 3928-3935, 2019
72019
Simulation Study of a p-GaN HEMT With an Integrated Schottky Barrier Diode
B Yi, Z Wu, J Cheng, H Huang, W Zhang, WT Ng
IEEE Transactions on Electron Devices 68 (12), 6039-6045, 2021
62021
An IGBT gate driver IC with collector current sensing
J Chen, W Zhang, A Shorten, J Yu, WT Ng, M Sasaki, T Kawashima, ...
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
62017
Practical limits of liquid cooling electric vehicle power modules
A Catuneanu, JG Burgers, P Fleury, WJ Zhang, WT Ng
2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021
42021
Novel Low Turn-Off Loss Trench-Gate FS-IGBT With a Hybrid Collector Structure
K Ma, W Zhang, WT Ng
IEEE Journal of the Electron Devices Society 7, 677-681, 2019
42019
Compact GaN power modules with direct bonded liquid-cooled heat exchanger suitable for EV applications
WJ Zhang, J Liang, WT Cui, N Kim, R Li, A Catuneanu, M Birkett, ...
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021
32021
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