| A review of recent MOSFET threshold voltage extraction methods A Ortiz-Conde, FJG Sánchez, JJ Liou, A Cerdeira, M Estrada, Y Yue Microelectronics reliability 42 (4-5), 583-596, 2002 | 1157 | 2002 |
| Accurate modeling and parameter extraction method for organic TFTs M Estrada, A Cerdeira, J Puigdollers, L Reséndiz, J Pallares, LF Marsal, ... Solid-state electronics 49 (6), 1009-1016, 2005 | 205 | 2005 |
| New procedure for the extraction of basic a-Si: H TFT model parameters in the linear and saturation regions A Cerdeira, M Estrada, R Garcıa, A Ortiz-Conde, FJG Sánchez Solid-State Electronics 45 (7), 1077-1080, 2001 | 195 | 2001 |
| A compact model for organic field-effect transistors with improved output asymptotic behaviors CH Kim, A Castro-Carranza, M Estrada, A Cerdeira, Y Bonnassieux, ... IEEE Transactions on Electron Devices 60 (3), 1136-1141, 2013 | 126 | 2013 |
| Mobility model for compact device modeling of OTFTs made with different materials M Estrada, I Mejía, A Cerdeira, J Pallares, LF Marsal, B Iñiguez Solid-State Electronics 52 (5), 787-794, 2008 | 116 | 2008 |
| Compact model for short channel symmetric doped double-gate MOSFETs A Cerdeira, B Iñiguez, M Estrada Solid-State Electronics 52 (7), 1064-1070, 2008 | 113 | 2008 |
| Integral function method for determination of nonlinear harmonic distortion A Cerdeira, MA Alemán, M Estrada, D Flandre Solid-State Electronics 48 (12), 2225-2234, 2004 | 96 | 2004 |
| Modeling of potentials and threshold voltage for symmetric doped double-gate MOSFETs A Cerdeira, O Moldovan, B Iñiguez, M Estrada Solid-State Electronics 52 (5), 830-837, 2008 | 77 | 2008 |
| Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications O Moldovan, A Cerdeira, D Jiménez, JP Raskin, V Kilchytska, D Flandre, ... Solid-state electronics 51 (5), 655-661, 2007 | 77 | 2007 |
| MIS polymeric structures and OTFTs using PMMA on P3HT layers M Estrada, I Mejia, A Cerdeira, B Iñiguez Solid-State Electronics 52 (1), 53-59, 2008 | 70 | 2008 |
| New method for determination of harmonic distortion in SOI FD transistors A Cerdeira, M Estrada, R Quintero, D Flandre, A Ortiz-Conde, ... Solid-State Electronics 46 (1), 103-108, 2002 | 65 | 2002 |
| Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor A Cerdeira, MA Alemán, MA Pavanello, JA Martino, L Vancaillie, ... IEEE Transactions on Electron Devices 52 (5), 967-972, 2005 | 64 | 2005 |
| Effect of active layer thickness on the electrical characteristics of polymer thin film transistors L Reséndiz, M Estrada, A Cerdeira, B Iñiguez, MJ Deen Organic Electronics 11 (12), 1920-1927, 2010 | 52 | 2010 |
| Charge-based continuous model for long-channel symmetric double-gate junctionless transistors A Cerdeira, M Estrada, B Iniguez, RD Trevisoli, RT Doria, M De Souza, ... Solid-State Electronics 85, 59-63, 2013 | 47 | 2013 |
| Implementation of the symmetric doped doublegate MOSFET model in VerilogA for circuit simulation J Alvarado, B Iniguez, M Estrada, D Flandre, A Cerdeira International Journal of Numerical Modelling: Electronic Networks, Devices …, 2010 | 47 | 2010 |
| Charge-based compact analytical model for triple-gate junctionless nanowire transistors F Ávila-Herrera, BC Paz, A Cerdeira, M Estrada, MA Pavanello Solid-State Electronics 122, 23-31, 2016 | 45 | 2016 |
| A simple procedure to extract the threshold voltage of amorphous thin film MOSFETs in the saturation region A Ortiz-Conde, A Cerdeira, M Estrada, FJG Sánchez, R Quintero Solid-State Electronics 45 (5), 663-667, 2001 | 45 | 2001 |
| A method to extract mobility degradation and total series resistance of fully-depleted SOI MOSFETs FJG Sánchez, A Ortiz-Conde, A Cerdeira, M Estrada, D Flandre, JJ Liou IEEE Transactions on Electron Devices 49 (1), 82-88, 2002 | 43 | 2002 |
| Frequency and voltage dependence of the capacitance of MIS structures fabricated with polymeric materials M Estrada, F Ulloa, M Avila, J Sánchez, A Cerdeira, A Castro-Carranza, ... IEEE transactions on electron devices 60 (6), 2057-2063, 2013 | 39 | 2013 |
| New procedure for the extraction of a-Si: H TFTs model parameters in the subthreshold region L Reséndiz, M Estrada, A Cerdeira Solid-State Electronics 47 (8), 1351-1358, 2003 | 39 | 2003 |
