Follow
Sushant Mittal
Sushant Mittal
Computational Process, Lam Research
Verified email at lamresearch.com
Title
Cited by
Cited by
Year
Analytical estimation of threshold voltage variability by metal gate granularity in FinFET
PH Vardhan, S Mittal, S Ganguly, U Ganguly
IEEE Transactions on Electron Devices 64 (8), 3071-3076, 2017
312017
An Analytical Model to Estimate FinFET’sDistribution Due to Fin-Edge Roughness
S Mittal, AS Shekhawat, U Ganguly
IEEE Transactions on Electron Devices 63 (3), 1352-1358, 2016
162016
Impact of MOL/BEOL air-spacer on parasitic capacitance and circuit performance at 3 nm node
A Pal, S Mittal, EM Bazizi, A Sachid, M Saremi, B Colombeau, G Thareja, ...
2019 International Conference on Simulation of Semiconductor Processes and …, 2019
142019
Epitaxially defined FinFET: Variability resistant and high-performance technology
S Mittal, S Gupta, A Nainani, MC Abraham, K Schuegraf, S Lodha, ...
IEEE Transactions on Electron Devices 61 (8), 2711-2718, 2014
142014
Statistical variability analysis of SRAM cell for emerging transistor technologies
S Kurude, S Mittal, U Ganguly
IEEE Transactions on Electron Devices 63 (9), 3514-3520, 2016
122016
Analytical Model to Estimate FinFET’s , , SS, and Distribution Due to FER
S Mittal, AS Shekhawat, S Ganguly, U Ganguly
IEEE Transactions on Electron Devices 64 (8), 3489-3493, 2017
102017
An Analytical Model to Estimate Distribution of Partially Correlated Fin Edges in FinFETs Due to Fin-Edge Roughness
S Mittal, U Ganguly
IEEE Transactions on Electron Devices 64 (4), 1708-1715, 2017
92017
The First Compact Model to Determine Distribution for DG-FinFET Due to LER
S Mittal, U Ganguly
IEEE Transactions on Electron Devices 65 (11), 4772-4779, 2018
72018
Analytical modeling of metal gate granularity based threshold voltage variability in NWFET
PH Vardhan, S Mittal, S Ganguly, U Ganguly
Solid-State Electronics 147, 26-34, 2018
72018
FinFET scaling rule based on variability considerations
S Mittal, AS Shekhawat, U Ganguly
2015 73rd Annual Device Research Conference (DRC), 127-128, 2015
62015
A FinFET LER VTvariability estimation scheme with 300× efficiency improvement
SN Chinta, S Mittal, P Debashis, U Ganguly
2014 International Conference on Simulation of Semiconductor Processes and …, 2014
62014
Epi defined (ED) FinFET: An alternate device architecture for high mobility Ge channel integration in PMOSFET
S Mittal, S Gupta, A Nainani, MC Abraham, K Schuegraf, S Lodha, ...
2013 IEEE 5th International Nanoelectronics Conference (INEC), 367-370, 2013
52013
Epitaxialy defined (ED) FinFET: to reduce VTvariability and enable multiple VT
S Mittal, S Gupta, A Nainani, MC Abraham, K Schuegraf, S Lodha, ...
70th Device Research Conference, 127-128, 2012
42012
Analytical modeling of metal gate granularity induced Vt variability in NWFETs
PH Vardhan, S Mittal, AS Shekhawat, S Ganguly, U Ganguly
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
32016
A bulk planar SiGe quantum-well based ZRAM with low Vt variability
S Dutta, S Mittal, S Lodha, J Schulze, U Ganguly
2015 IEEE International Memory Workshop (IMW), 1-4, 2015
32015
Epitaxial rare earth oxide (EOx) FinFET: A variability-resistant Ge FinFET architecture with multi VT
S Mittal, S Kurude, S Dutta, P Debashis, S Ganguly, S Lodha, A Laha, ...
72nd Device Research Conference, 97-98, 2014
32014
Highly-Doped Through-Contact Silicon Epi Design at 3 nm node
S Mittal, A Pal, M Saremi, J Ferrell, M Haverty, T Miyashita, N Kim, ...
2019 Device Research Conference (DRC), 55-56, 2019
22019
Selective fin trimming after dummy gate removal as the local fin width scaling approach for N5 and beyond
T Miyashita, S Sun, S Mittal, MS Kim, A Pal, A Sachid, K Pathak, ...
2018 IEEE International Electron Devices Meeting (IEDM), 35.6. 1-35.6. 4, 2018
22018
Fully self-aligned via
R Freed, M Sachan, SS Roy, G Alva, HYD Hwang, U Mitra, EM Bazizi, ...
US Patent 11,437,274, 2022
12022
Via size optimization for optimum circuit performance at 3 nm node
S Mittal, A Pal, M Saremi, EM Bazizi, B Alexander, B Ayyagari
2020 International Conference on Simulation of Semiconductor Processes and …, 2020
12020
The system can't perform the operation now. Try again later.
Articles 1–20