Milan Pesic
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Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ...
Advanced Functional Materials 26 (25), 4601-4612, 2016
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films
ED Grimley, T Schenk, X Sang, M Pešić, U Schroeder, T Mikolajick, ...
Advanced Electronic Materials 2 (9), 1600173, 2016
Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2
M Hoffmann, M Pešić, K Chatterjee, AI Khan, S Salahuddin, S Slesazeck, ...
Advanced Functional Materials 26 (47), 8643-8649, 2016
Lanthanum-doped hafnium oxide: a robust ferroelectric material
U Schroeder, C Richter, MH Park, T Schenk, M Pesic, M Hoffmann, ...
Inorganic chemistry 57 (5), 2752-2765, 2018
Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories
E Yurchuk, J Müller, S Müller, J Paul, M Pešić, R van Bentum, ...
IEEE Transactions on Electron Devices 63 (9), 3501-3507, 2016
Complex internal bias fields in ferroelectric hafnium oxide
T Schenk, M Hoffmann, J Ocker, M Pesic, T Mikolajick, U Schroeder
ACS applied materials & interfaces 7 (36), 20224-20233, 2015
Electric field cycling behavior of ferroelectric hafnium oxide
T Schenk, U Schroeder, M Pešić, M Popovici, YV Pershin, T Mikolajick
ACS applied materials & interfaces 6 (22), 19744-19751, 2014
Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2
M Pešić, M Hoffmann, C Richter, T Mikolajick, U Schroeder
Advanced Functional Materials, 2016
Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
H Mulaosmanovic, S Slesazeck, J Ocker, M Pesic, S Muller, S Flachowsky, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.8. 1-26.8. 3, 2015
Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory
K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini, ...
2018 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2018
On the stabilization of ferroelectric negative capacitance in nanoscale devices
M Hoffmann, M Pešić, S Slesazeck, U Schroeder, T Mikolajick
Nanoscale 10 (23), 10891-10899, 2018
Domain pinning: Comparison of hafnia and PZT based ferroelectrics
FPG Fengler, M Pešić, S Starschich, T Schneller, C Künneth, U Böttger, ...
Advanced Electronic Materials 3 (4), 1600505, 2017
Ferroelectric negative capacitance domain dynamics
M Hoffmann, AI Khan, C Serrao, Z Lu, S Salahuddin, M Pešić, ...
Journal of Applied Physics 123 (18), 184101, 2018
Memory technology—a primer for material scientists
T Schenk, M Pešić, S Slesazeck, U Schroeder, T Mikolajick
Reports on Progress in Physics 83 (8), 086501, 2020
How to make DRAM non-volatile? Anti-ferroelectrics: A new paradigm for universal memories
M Pesic, S Knebel, M Hoffmann, C Richter, T Mikolajick, U Schroeder
2016 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2016
Comparative study of reliability of ferroelectric and anti-ferroelectric memories
M Pešić, U Schroeder, S Slesazeck, T Mikolajick
IEEE Transactions on Device and Materials Reliability 18 (2), 154-162, 2018
Built-in bias generation in anti-ferroelectric stacks: Methods and device applications
M Pešić, T Li, V Di Lecce, M Hoffmann, M Materano, C Richter, B Max, ...
IEEE Journal of the Electron Devices Society 6, 1019-1025, 2018
Interplay between ferroelectric and resistive switching in doped crystalline HfO2
B Max, M Pešić, S Slesazeck, T Mikolajick
Journal of Applied Physics 123 (13), 134102, 2018
A computational study of hafnia-based ferroelectric memories: From ab initio via physical modeling to circuit models of ferroelectric device
M Pešić, C Künneth, M Hoffmann, H Mulaosmanovic, S Müller, ET Breyer, ...
Journal of computational Electronics 16, 1236-1256, 2017
Conduction barrier offset engineering for DRAM capacitor scaling
M Pešić, S Knebel, K Cho, C Jung, J Chang, H Lim, N Kolomiiets, ...
Solid-State Electronics 115, 133-139, 2016
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