| Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook RA Ovanesyan, EA Filatova, SD Elliott, DM Hausmann, DC Smith, ... Journal of Vacuum Science & Technology A 37 (6), 2019 | 104 | 2019 |
| Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma RA Ovanesyan, DM Hausmann, S Agarwal ACS Applied Materials & Interfaces 7 (20), 10806-10813, 2015 | 85 | 2015 |
| Atomic Layer Deposition of SiCxNy Using Si2Cl6 and CH3NH2 Plasma RA Ovanesyan, N Leick, KM Kelchner, DM Hausmann, S Agarwal Chemistry of Materials 29 (15), 6269-6278, 2017 | 30 | 2017 |
| A Three-Step Atomic Layer Deposition Process for SiNx Using Si2Cl6, CH3NH2, and N2 Plasma RA Ovanesyan, DM Hausmann, S Agarwal ACS applied materials & interfaces 10 (22), 19153-19161, 2018 | 29 | 2018 |
| Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics RA Ovanesyan, DM Hausmann, S Agarwal Journal of Vacuum Science & Technology A 35 (2), 2017 | 22 | 2017 |
| Surface reactions of aminosilane precursors during N2 plasmaassisted atomic layer deposition of SiNx N Leick, JMM Huijs, RA Ovanesyan, DM Hausmann, S Agarwal Plasma Processes and Polymers 16 (9), 1900032, 2019 | 14 | 2019 |
| Surface reaction mechanisms during the atomic layer deposition of silicon-based dielectrics RA Ovanesyan 2018-Mines Theses & Dissertations, 2018 | | 2018 |
| Identification of the carbon incorporation mechanism during atomic layer deposition of SiCxNy using in situ ATR-FTIR spectroscopy RA Ovanesyan, N Leick, KM Kelchner, DM Hausmann, S Agarwal 2017 Graduate Research And Discovery Symposium (GRADS) posters and presentations, 2017 | | 2017 |
Sumit AgarwalColorado School of Mines在 mines.edu 的电子邮件经过验证
