| Efficient high-power laser diodes P Crump, G Erbert, H Wenzel, C Frevert, CM Schultz, KH Hasler, R Staske, ... IEEE Journal of Selected Topics in Quantum Electronics 19 (4), 1501211-1501211, 2013 | 253 | 2013 |
| Carrier transfer in self-assembled coupled InAs/GaAs quantum dots GG Tarasov, YI Mazur, ZY Zhuchenko, A Maaßdorf, D Nickel, JW Tomm, ... Journal of Applied Physics 88 (12), 7162-7170, 2000 | 74 | 2000 |
| High beam quality in broad area lasers via suppression of lateral carrier accumulation M Winterfeldt, P Crump, S Knigge, A Maaßdorf, U Zeimer, G Erbert IEEE Photonics Technology Letters 27 (17), 1809-1812, 2015 | 66 | 2015 |
| Wavelength‐stabilized high‐pulse‐power laser diodes for automotive LiDAR A Knigge, A Klehr, H Wenzel, A Zeghuzi, J Fricke, A Maaßdorf, A Liero, ... physica status solidi (a) 215 (8), 1700439, 2018 | 63 | 2018 |
| Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs T Kaul, G Erbert, A Maaßdorf, S Knigge, P Crump Semiconductor Science and technology 33 (3), 035005, 2018 | 56 | 2018 |
| Impact of carrier nonpinning effect on thermal power saturation in GaAs-based high power diode lasers T Kaul, G Erbert, A Klehr, A Maaßdorf, D Martin, P Crump IEEE Journal of Selected Topics in Quantum Electronics 25 (6), 1-10, 2019 | 50 | 2019 |
| 11W broad area 976 nm DFB lasers with 58% power conversion efficiency CM Schultz, P Crump, H Wenzel, O Brox, A Maaßdorf, G Erbert, G Tränkle Electronics letters 46 (8), 580-581, 2010 | 40 | 2010 |
| Narrow stripe broad area lasers with high order distributed feedback surface gratings J Decker, P Crump, J Fricke, A Maassdorf, G Erbert, G Tränkle IEEE Photonics Technology Letters 26 (8), 829-832, 2014 | 39 | 2014 |
| 17-W near-diffraction-limited 970-nm output from a tapered semiconductor optical amplifier X Wang, G Erbert, H Wenzel, P Crump, B Eppich, S Knigge, P Ressel, ... IEEE Photonics Technology Letters 25 (2), 115-118, 2013 | 33 | 2013 |
| 975-nm high-power broad area diode lasers optimized for narrow spectral linewidth applications P Crump, CM Schultz, A Pietrzak, S Knigge, O Brox, A Maaßdorf, F Bugge, ... High-Power Diode Laser Technology and Applications VIII 7583, 210-219, 2010 | 31 | 2010 |
| Novel approaches to increasing the brightness of broad area lasers P Crump, M Winterfeldt, J Decker, M Ekterai, J Fricke, S Knigge, ... Novel In-Plane Semiconductor Lasers XV 9767, 219-227, 2016 | 30 | 2016 |
| Assessing the influence of the vertical epitaxial layer design on the lateral beam quality of high-power broad area diode lasers M Winterfeldt, J Rieprich, S Knigge, A Maaßdorf, M Hempel, R Kernke, ... High-Power Diode Laser Technology and Applications XIV 9733, 121-129, 2016 | 28 | 2016 |
| Wavelength stabilized high pulse power 48 emitter laser bars for automotive light detection and ranging application A Klehr, A Liero, H Christopher, H Wenzel, A Maaßdorf, P Della Casa, ... Semiconductor Science and Technology 35 (6), 065016, 2020 | 27 | 2020 |
| Development of high-power diode lasers with beam parameter product below 2 mm× mrad within the BRIDLE project P Crump, J Decker, M Winterfeldt, J Fricke, A Maaßdorf, G Erbert, ... High-Power Diode Laser Technology and Applications XIII 9348, 98-108, 2015 | 27 | 2015 |
| High-efficiency broad-ridge waveguide lasers M Wilkens, H Wenzel, J Fricke, A Maaßdorf, P Ressel, S Strohmaier, ... IEEE Photonics Technology Letters 30 (6), 545-548, 2018 | 26 | 2018 |
| Low-loss smile-insensitive external frequency-stabilization of high power diode lasers enabled by vertical designs with extremely low divergence angle and high efficiency P Crump, S Knigge, A Maaßdorf, F Bugge, S Hengesbach, U Witte, ... High-Power Diode Laser Technology and Applications XI 8605, 208-220, 2013 | 26 | 2013 |
| 25-W monolithic spectrally stabilized 975-nm minibars for dense spectral beam combining J Decker, P Crump, J Fricke, A Maaßdorf, M Traub, U Witte, T Brand, ... IEEE Photonics Technology Letters 27 (15), 1675-1678, 2015 | 24 | 2015 |
| Extreme triple asymmetric (ETAS) epitaxial designs for increased efficiency at high powers in 9xx-nm diode lasers T Kaul, G Erbert, A Maaßdorf, D Martin, P Crump High-Power Diode Laser Technology XVI 10514, 53-59, 2018 | 23 | 2018 |
| Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor F Brunner, T Bergunde, E Richter, P Kurpas, M Achouche, A Maaßdorf, ... Journal of crystal growth 221 (1-4), 53-58, 2000 | 23 | 2000 |
| Reliable operation of 976nm high power DFB broad area diode lasers with over 60% power conversion efficiency P Crump, CM Schultz, H Wenzel, S Knigge, O Brox, A Maaßdorf, F Bugge, ... Novel In-Plane Semiconductor Lasers X 7953, 306-317, 2011 | 22 | 2011 |
