Cumulative dose γ-irradiation effects on material properties of AlGaN/GaN hetero-structures and electrical properties of HEMT devices C Sharma, AK Visvkarma, R Laishram, A Malik, K Narang, S Vinayak, ... Semiconductor Science and Technology 34 (6), 065024, 2019 | 32 | 2019 |
Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors AK Visvkarma, C Sharma, R Laishram, S Kapoor, DS Rawal, S Vinayak, ... AIP Advances 9 (12), 2019 | 25 | 2019 |
Effect of γ-ray irradiation on Schottky and ohmic contacts on AlGaN/GaN hetero-structures C Sharma, AK Visvkarma, R Laishram, A Kumar, DS Rawal, S Vinayak, ... Microelectronics Reliability 105, 113565, 2020 | 24 | 2020 |
Improvement in DC and pulse characteristics of AlGaN/GaN HEMT by employing dual metal gate structure AK Visvkarma, R Laishram, S Kapoor, DS Rawal, S Vinayak, M Saxena Semiconductor Science and Technology 34 (10), 105013, 2019 | 17 | 2019 |
Understanding -Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model C Sharma, N Modolo, TL Wu, M Meneghini, G Meneghesso, E Zanoni, ... IEEE Transactions on Electron Devices 67 (3), 1126-1131, 2020 | 14 | 2020 |
Impact of Gamma Radiations on Static, Pulsed I–V, and RF Performance Parameters of AlGaN/GaN HEMT AK Visvkarma, K Sehra, R Laishram, A Malik, S Sharma, S Kumar, ... IEEE Transactions on Electron Devices 69 (5), 2299-2306, 2022 | 13 | 2022 |
Advances in DC/RF performance of AlGaN/GaN MIS-HEMT by incorporating dual metal gate architecture AK Visvakarma, K Sehra, R Laishram, DS Rawal, M Saxena IETE Technical Review 39 (2), 301-309, 2022 | 10 | 2022 |
Improvement in Schottky barrier inhomogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ-ray irradiation AK Visvkarma, C Sharma, C Saraswat, DS Rawal, S Vinayak, M Saxena Semiconductor Science and Technology 36 (6), 065012, 2021 | 5 | 2021 |
Ohmic contact morphology improvement with reduced resistance using Si/Au/Ti/Al/Ni/Au (AlGaN) and Si/Au/Ti/Al/Ni/Au (InAlN) stack layers in III-Nitride HEMTs AK Visvkarma, R Laishram, S Kapoor, DS Rawal, S Vinayak, M Saxena Semiconductor Science and Technology 37 (8), 085006, 2022 | 2 | 2022 |
Comparative study of polymer based novel organic–inorganic hetero-junctions with n-GaN and AlGaN/GaN epi-structures R Khan, AK Visvkarma, K Narang, RK Bag, MVG Padmavati, R Tyagi, ... Materials Science and Engineering: B 272, 115364, 2021 | 1 | 2021 |
Investigation on the variation of sheet resistance of rf deposited nichrome thin films with deposition parameters AK Visvkarma, R Laishram, HK Saini, RK Sawal, S Kapoor, DS Rawal The Physics of Semiconductor Devices: Proceedings of IWPSD 2017, 199-203, 2019 | 1 | 2019 |
Investigation of Traps in AlGaN/GaN HEMT Epitaxial Structure Using Conductance Method Chanchal, AK Visvkarma, H Sheoran, A Malik, R Laishram, DS Rawal, ... International Symposium on VLSI Design and Test, 76-84, 2022 | | 2022 |
Dependence of Gate Leakage Current on Efficacy of Gate Field Plate in AlGaN/GaN HEMT C Chanchal, AK Visvkarma, A Malik, R Laishram, DS Rawal, M Saxena 2022 IEEE VLSI Device Circuit and System (VLSI DCS), 265-268, 2022 | | 2022 |
Enhancement in Electrical Characteristics of AlGaN/GaN HEMT Using Gate Engineered Dielectric Pocket Dual-Metal Gate AK Visvkarma, K Sehra, R Laishram, DS Rawal, M Saxena Computers and Devices for Communication: Proceedings of CODEC 2019, 369-374, 2021 | | 2021 |
Effect of In-homogeneities on Schottky barrier height & Richardson constant of Ni-AlGaN/GaN Schottky contact AK Visvkarma, C Sharma, NK Saini, M Saxena, R Laishram, DS Rawal 2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2020 | | 2020 |
Effect of Nitrogen Plasma on AlGaN/GaN HEMT Devices AK Visvkarma, R Laishram, C Sharma, N Kumar, DS Rawal, M Saxena | | |
Impact of Different Contact Metals on the Schottky Characteristics of AlGaN/GaN HEMT AK Visvkarma, HK Saini, N Kumar, R Laishram, S Kapoor, DS Rawal, ... | | |