| High-performance solution-processed polymer ferroelectric field-effect transistors RCG Naber, C Tanase, PWM Blom, GH Gelinck, AW Marsman, ... Nature materials 4 (3), 243-248, 2005 | 1028 | 2005 |
| Organic nonvolatile memory devices based on ferroelectricity RCG Naber, K Asadi, PWM Blom, DM De Leeuw, B De Boer Advanced materials 22 (9), 933-945, 2010 | 601 | 2010 |
| Electron tunneling through alkanedithiol self-assembled monolayers in large-area molecular junctions HB Akkerman, RCG Naber, B Jongbloed, PA van Hal, PWM Blom, ... Proceedings of the National Academy of Sciences 104 (27), 11161-11166, 2007 | 221 | 2007 |
| Low-voltage polymer field-effect transistors for nonvolatile memories RCG Naber, B De Boer, PWM Blom, DM De Leeuw Applied Physics Letters 87 (20), 2005 | 221 | 2005 |
| Low voltage switching of a spin cast ferroelectric polymer RCG Naber, PWM Blom, AW Marsman, DM De Leeuw Applied Physics Letters 85 (11), 2032-2034, 2004 | 181 | 2004 |
| All-polymer ferroelectric transistors GH Gelinck, AW Marsman, FJ Touwslager, S Setayesh, DM De Leeuw, ... Applied Physics Letters 87 (9), 2005 | 151 | 2005 |
| High charge density and mobility in poly (3-hexylthiophene) using a polarizable gate dielectric RCG Naber, M Mulder, B De Boer, PWM Blom, DM De Leeuw Organic electronics 7 (3), 132-136, 2006 | 112 | 2006 |
| Origin of the drain current bistability in polymer ferroelectric field-effect transistors RCG Naber, J Massolt, M Spijkman, K Asadi, PWM Blom, DM De Leeuw Applied Physics Letters 90 (11), 2007 | 96 | 2007 |
| High-performance solution-deposited ambipolar organic transistors based on terrylene diimides C Liu, Z Liu, HT Lemke, HN Tsao, RCG Naber, Y Li, K Banger, K Müllen, ... Chemistry of materials 22 (6), 2120-2124, 2010 | 76 | 2010 |
| A gate dielectric that enables high ambipolar mobilities in polymer light-emitting field-effect transistors RCG Naber, M Bird, H Sirringhaus Applied Physics Letters 93 (2), 2008 | 66 | 2008 |
| An Organic FieldEffect Transistor with Programmable Polarity RCG Naber, PWM Blom, GH Gelinck, AW Marsman, DM De Leeuw Advanced materials 17 (22), 2692-2695, 2005 | 56 | 2005 |
| Comment on ‘Extrinsic versus intrinsic ferroelectric switching: experimental investigations using ultra-thin PVDF Langmuir–Blodgett films’ RCG Naber, PWM Blom, DM De Leeuw Journal of Physics D: Applied Physics 39 (9), 1984, 2006 | 48 | 2006 |
| Optimization of BBr3 diffusion processes for n-type silicon solar cells S Werner, E Lohmüller, U Belledin, AHG Vlooswijk, RCG Naber, S Mack, ... 31st European Photovoltaic Solar Energy Conference; Hamburg, Germany, 2015 | 23 | 2015 |
| 19% efficient n-type Si solar cells made in pilot production AR Burgers, RCG Naber, AJ Carr, PC Barton, LJ Geerligs, X Jingfeng, ... Petten: ECN, 2010 | 21 | 2010 |
| Solar cell and method for manufacturing such a solar cell LJ Geerligs, G Li, PC Barton, RCG Naber, AF Stassen, Z Hu US Patent 8,623,688, 2014 | 12 | 2014 |
| ECN n-type silicon solar cell technology: an industrial process that yields 18.5% RCG Naber, N Guillevin, AR Burgers, LJ Geerligs, AW Weeber 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 000990-000992, 2009 | 11 | 2009 |
| Method of Manufacturing of a Solar Cell and Solar Cell Thus Obtained M Lenes, RCG Naber, JRM Luchies, A Hasper US Patent App. 15/762,507, 2018 | 10 | 2018 |
| n-PERT solar cells with passivated contact technology based on LPCVD polysilicon and fire-through contact metallization RCG Naber, M Lenes, AHG Vlooswijk, JRM Luchies, J Wang, F Zheng, ... 32nd European Photovoltaic Solar Energy Conference and Exhibition, 430-433, 2016 | 10 | 2016 |
| Development of 2-sided polysilicon passivating contacts for co-plated bifacial n-PERT cells S Singh, P Choulat, F Duerinckx, MR Payo, R Naber, M Lenes, L Tous, ... 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 0449-0452, 2020 | 8 | 2020 |
| Large area coplated bifacial nPERT cells with polysilicon passivating contacts on both sides S Singh, P Choulat, J Govaerts, A van der Heide, V Depauw, F Duerinckx, ... Progress in Photovoltaics: Research and Applications 30 (8), 899-909, 2022 | 7 | 2022 |
