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Rui Hao
Rui Hao
在 imperial.ac.uk 的电子邮件经过验证
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Mechanical properties of molybdenum disulfide and the effect of doping: an in situ TEM study
AA Tedstone, DJ Lewis, R Hao, SM Mao, P Bellon, RS Averback, ...
ACS applied materials & interfaces 7 (37), 20829-20834, 2015
502015
Defect reduction processes in heteroepitaxial non-polar a-plane GaN films
R Hao, MJ Kappers, MA Moram, CJ Humphreys
Journal of crystal growth 337 (1), 81-86, 2011
132011
Defect reduction in semi-polar (1122) gallium nitride grown using epitaxial lateral overgrowth
T Zhu, D Sutherland, TJ Badcock, R Hao, MA Moram, P Dawson, ...
Japanese Journal of Applied Physics 52 (8S), 08JB01, 2013
102013
The effects of annealing on non-polar (1 1 2 0) a-plane GaN films
R Hao, T Zhu, M Häberlen, TY Chang, MJ Kappers, RA Oliver, ...
Journal of crystal growth 312 (23), 3536-3543, 2010
102010
The effect of dislocation density and surface morphology on the optical properties of InGaN/GaN quantum wells grown on r-plane sapphire substrates
TJ Badcock, R Hao, MA Moram, MJ Kappers, P Dawson, CJ Humphreys
Japanese Journal of Applied Physics 50 (8R), 080201, 2011
62011
Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells
TJ Badcock, R Hao, MA Moram, MJ Kappers, P Dawson, RA Oliver, ...
Journal of Applied Physics 112 (1), 013534, 2012
52012
On the origin of bluegreen emission from heteroepitaxial nonpolar aplane InGaN quantum wells
MJ Kappers, TJ Badcock, R Hao, MA Moram, S Hammersley, P Dawson, ...
physica status solidi c 9 (34), 465-468, 2012
42012
The effect of indium concentration on the optical properties of aplane InGaN/GaN quantum wells grown on rplane sapphire substrates
TJ Badcock, R Hao, MA Moram, P Dawson, MJ Kappers, CJ Humphreys
physica status solidi (a) 208 (7), 1529-1531, 2011
42011
Properties of surfacepit related emission in a plane InGaN/GaN quantum wells grown on r plane sapphire
TJ Badcock, R Hao, MA Moram, P Dawson, MJ Kappers, CJ Humphreys
physica status solidi c 8 (78), 2179-2181, 2011
22011
Exciton confinement in narrow nonpolar InGaN/GaN quantum wells grown on rplane sapphire
TJ Badcock, MJ Kappers, MA Moram, R Hao, P Dawson, CJ Humphreys
physica status solidi (b) 249 (3), 494-497, 2012
12012
The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates
TJ Badcock, R Hao, MA Moram, MJ Kappers, P Dawson, CJ Humphreys
Japanese Journal of Applied Physics 52, 080201, 2013
2013
Rapid Communications-080201 The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates
TJ Badcock, R Hao, MA Moram, MJ Kappers, P Dawson, CJ Humphreys
Japanese Journal of Applied Physics 50 (8), 2011
2011
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