| A new read scheme for alleviating cell-to-cell interference in scaled-down 3D NAND flash memory JM Sim, M Kang, YH Song Electronics 9 (11), 1775, 2020 | 14 | 2020 |
| A novel program operation scheme with negative bias in 3-D NAND flash memory JM Sim, M Kang, YH Song IEEE Transactions on Electron Devices 68 (12), 6112-6117, 2021 | 7 | 2021 |
| Impact of residual stress on a polysilicon channel in scaled 3D NAND flash memory J Lee, DG Yoon, JM Sim, YH Song Electronics 10 (21), 2632, 2021 | 6 | 2021 |
| Gate All around with Back Gate NAND Flash Structure for Excellent Reliability Characteristics in Program Operation JM Sim, BS Kim, IH Nam, YH Song Electronics 10 (15), 1828, 2021 | 4 | 2021 |
| Asymmetric read bias for alleviating cell-to-cell interference in 3D NAND flash memory JM Sim, YH Song 2021 IEEE Region 10 Symposium (TENSYMP), 1-4, 2021 | 3 | 2021 |
| The Effect of Tungsten Volume on Residual Stress and Cell Characteristics in MONOS YT Oh, JM Sim, H Kino, DK Kim, T Tanaka, YH Song IEEE Journal of the Electron Devices Society 7, 382-387, 2019 | 2 | 2019 |
| A novel gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance with disturbance-less program operation JM Sim, IK Kang, SI Hong, C Kim, C Cho, K Min, YH Song Memories-Materials, Devices, Circuits and Systems 5, 100073, 2023 | 1 | 2023 |
| Mechanical stress in a tapered channel hole of 3D NAND flash memory DG Yoon, JM Sim, YH Song Microelectronics Reliability 143, 114941, 2023 | 1 | 2023 |
| Investigation of the Impact of External Stress on Memory Characteristics by Modifying the Backside of Substrate YT Oh, JM Sim, N Van Toan, H Kino, T Ono, T Tanaka, YH Song IEEE Transactions on Electron Devices 66 (4), 1741-1746, 2019 | 1 | 2019 |
| Concave and Convex Structures for Advanced 3-D NAND Flash Memory Technology J Song, JM Sim, B Kim, YH Song IEEE Transactions on Electron Devices 71 (4), 2810-2814, 2024 | | 2024 |
| Three dimensional semiconductor device having a back-gate electrode IK Kang, CH Kim, YH Song, JM Sim US Patent App. 18/159,570, 2024 | | 2024 |
| High Mobility and GIDL Erase-Compatible Characteristics in Hybrid Channel (Poly-Si/IGO) for Ultrahigh 3D NAND Flash Memory Applications JM Sim, SH Choi, SH Ryu, JH Song, JS Park, YH Song ACS Applied Electronic Materials, 2024 | | 2024 |
