Jinhyun Noh
Jinhyun Noh
Other namesJin Hyun Noh
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Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices
S Lee, I Kim, S Ha, C Yu, J Noh, S Pae, J Park
2015 IEEE International Reliability Physics Symposium, 4B. 1.1-4B. 1.4, 2015
Thermodynamic Studies of β-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate
H Zhou, K Maize, J Noh, A Shakouri, PD Ye
ACS omega 2 (11), 7723-7729, 2017
Study of neutron soft error rate (SER) sensitivity: Investigation of upset mechanisms by comparative simulation of FinFET and planar MOSFET SRAMs
J Noh, V Correas, S Lee, J Jeon, I Nofal, J Cerba, H Belhaddad, ...
IEEE Transactions on Nuclear Science 62 (4), 1642-1649, 2015
High Performance -Ga2O3 Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate
J Noh, S Alajlouni, MJ Tadjer, JC Culbertson, H Bae, M Si, H Zhou, ...
IEEE Journal of the Electron Devices Society 7, 914-918, 2019
Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β-Ga2O3 pn Oxide Heterojunction
H Bae, A Charnas, X Sun, J Noh, M Si, W Chung, G Qiu, X Lyu, ...
ACS omega 4 (24), 20756-20761, 2019
Electrothermal performance limit of β-Ga2O3 field-effect transistors
BK Mahajan, YP Chen, J Noh, PD Ye, MA Alam
Applied Physics Letters 115 (17), 173508, 2019
The impact of substrates on the performance of top-gate p-Ga203 field-effect transistors: record high drain current of 980 mA/mm on diamond
J Noh, M Si, H Zhou, MJ Tadjer, DY Peide
2018 76th Device Research Conference (DRC), 1-2, 2018
BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of …
M Si, A Murray, Z Lin, J Andler, J Li, J Noh, S Alajlouni, C Niu, X Lyu, ...
IEEE Transactions on Electron Devices 68 (7), 3195-3199, 2021
A metasurface optical modulator using voltage-controlled population of quantum well states
R Sarma, S Campione, M Goldflam, J Shank, J Noh, LT Le, MD Lange, ...
Applied Physics Letters 113 (20), 201101, 2018
Ultraviolet Light-Based Current–Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in -Ga2O3 FETs
H Bae, J Noh, S Alghamdi, M Si, DY Peide
IEEE Electron Device Letters 39 (11), 1708-1711, 2018
Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface
R Sarma, S Campione, M Goldflam, J Shank, J Noh, S Smith, PD Ye, ...
Applied Physics Letters 113 (6), 061108, 2018
Semiconductor devices
JH Noh, ST Kim, JH Yoo, BR Lee, JS Jeon
US Patent 9,472,659, 2016
First experimental demonstration of robust HZO/β-Ga₂O₃ ferroelectric field-effect transistors as synaptic devices for artificial intelligence applications in a high …
J Noh, H Bae, J Li, Y Luo, Y Qu, TJ Park, M Si, X Chen, AR Charnas, ...
IEEE Transactions on Electron Devices 68 (5), 2515-2521, 2021
Structural effects on heat dissipation in InGaAs MHEMTs
J Noh, Y Ryoo, N Jeon, HY Cha, KS Seo
Semiconductor science and technology 28 (4), 045012, 2013
The impact of channel semiconductor on the memory characteristics of ferroelectric field-effect transistors
M Si, Z Lin, J Noh, J Li, W Chung, DY Peide
IEEE Journal of the Electron Devices Society 8, 846-849, 2020
Semiconductor device
JH Yoo, JH Noh, KM Chun, JS Jeon
US Patent 10,056,479, 2018
Semiconductor device using three dimensional channel
KY Kim, JH Yoo, JH Noh, WY Maeng, YW Jeon
US Patent 9,437,730, 2016
Enhancement of Thermal Transfer From β-Ga2O3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer
J Noh, PR Chowdhury, M Segovia, S Alajlouni, M Si, AR Charnas, ...
IEEE Transactions on Electron Devices 69 (3), 1186-1190, 2022
First demonstration of robust tri-gate β-Ga2O3 nano-membrane field-effect transistors
H Bae, TJ Park, J Noh, W Chung, M Si, S Ramanathan, DY Peide
Nanotechnology 33 (12), 125201, 2021
Layout design system, semiconductor device fabricated by using the system and method for fabricating the semiconductor device
KH Baek, JH Noh, TJ Song, G Yang, OH Sang-Kyu
US Patent 9,576,953, 2017
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