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Alnazer Hamed Mohamed
Alnazer Hamed Mohamed
Nanoelectronic Devices
Verified email at swansea.ac.uk
Title
Cited by
Cited by
Year
Channel mobility and contact resistance in scaled ZnO thin-film transistors
AH Mohamed, NAB Ghazali, HMH Chong, RJ Cobley, L Li, K Kalna
Solid-State Electronics 172, 107867, 2020
72020
Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
AH Mohamed, R Oxland, M Aldegunde, SP Hepplestone, PV Sushko, ...
Solid-State Electronics 142, 31-35, 2018
22018
III–V NMOS
A Mohamed, D Nagy, MA Elmessary, K Kalna
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Articles 1–3