| High RF performance AlGaN/GaN HEMT fabricated by recess-arrayed ohmic contact technology Y Lu, X Ma, L Yang, B Hou, M Mi, M Zhang, J Zheng, H Zhang, Y Hao IEEE Electron Device Letters 39 (6), 811-814, 2018 | 48 | 2018 |
| Analysis of the breakdown characterization method in GaN-based HEMTs SL Zhao, B Hou, WW Chen, MH Mi, JX Zheng, JC Zhang, XH Ma, Y Hao IEEE Transactions on power electronics 31 (2), 1517-1527, 2015 | 37 | 2015 |
| Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability S Stoffels, N Posthuma, S Decoutere, B Bakeroot, AN Tallarico, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-10, 2019 | 34 | 2019 |
| Improved on-state performance of AlGaN/GaN Fin-HEMTs by reducing the length of the nanochannel M Zhang, XH Ma, MH Mi, YL He, B Hou, JX Zheng, Q Zhu, LX Chen, ... Applied Physics Letters 110 (19), 2017 | 18 | 2017 |
| Extraction method for parasitic capacitances and inductances of HEMT models HS Zhang, PJ Ma, Y Lu, BC Zhao, JX Zheng, XH Ma, Y Hao Solid-state electronics 129, 108-113, 2017 | 17 | 2017 |
| An improved EEHEMT model for kink effect on AlGaN/GaN HEMT MY Cao, Y Lu, JX Wei, YH Chen, WJ Li, JX Zheng, XH Ma, Y Hao Chinese Physics B 23 (8), 087201, 2014 | 14 | 2014 |
| A scalable active compensatory sub-circuit for accurate GaN HEMT large signal models JX Zheng, XH Ma, Y Lu, BC Zhao, HS Zhang, M Zhang, Y Hao IEEE Microwave and Wireless Components Letters 26 (6), 431-433, 2016 | 13 | 2016 |
| A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT JX Zheng, XH Ma, Y Lu, BC Zhao, HH Zhang, M Zhang, MY Cao, Y Hao Chinese Physics B 24 (10), 107305, 2015 | 7 | 2015 |
| Ka-band full-360° analog phase shifter with low insertion loss M Cao, Y Lu, J Wei, J Zheng, X Ma, Y Hao Journal of semiconductors 35 (10), 105005, 2014 | 7 | 2014 |
| A high efficiency C-band internally-matched harmonic tuning GaN power amplifier Y Lu, BC Zhao, JX Zheng, HS Zhang, XF Zheng, XH Ma, Y Hao, PJ Ma Solid-State Electronics 123, 96-100, 2016 | 6 | 2016 |
| A 5–8 GHz wideband 100 W internally matched GaN power amplifier B Zhao, X Ma, Y Lu, J Zheng, W Han, H Zhang, Y Zhang, Y Hao IEICE Electronics Express 12 (6), 20150172-20150172, 2015 | 6 | 2015 |
| X-band inverse class-F GaN internally-matched power amplifier BC Zhao, Y Lu, WZ Han, JX Zheng, HS Zhang, P Ma, XH Ma, Y Hao Chinese Physics B 25 (9), 097306, 2016 | 3 | 2016 |
| Improving the peak value and linearity of transconductance for AlGaN/GaN Fin-HEMTs by narrowing down the fin length M Zhang, M Mi, B Hou, Q Zhu, L Chen, J Zheng, H Zhang, L Yang, X Ma, ... 2017 14th China International Forum on Solid State Lighting: International …, 2017 | | 2017 |
| The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology JX Zheng, XH Ma, Y Lu, BC Zhao, HS Zhang, M Zhang, LX Chen, Q Zhu, ... Chinese Physics B 26 (8), 088401, 2017 | | 2017 |
| A novel graphical method for dual-frequency two sections transformer B Zhao, P Ma, Y Lu, J Zheng, H Zhang, Z Shi, X Ma, Y Hao IEICE Electronics Express 13 (12), 20160509-20160509, 2016 | | 2016 |
