| Atomically thin femtojoule memristive device H Zhao, Z Dong, H Tian, D DiMarzi, MG Han, L Zhang, X Yan, F Liu, ... Advanced Materials 29 (47), 1703232, 2017 | 176 | 2017 |
| Performance limits projection of black phosphorous field-effect transistors KT Lam, Z Dong, J Guo IEEE Electron Device Letters 35 (9), 963-965, 2014 | 109 | 2014 |
| A simple model of negative capacitance FET with electrostatic short channel effects Z Dong, J Guo IEEE Transactions on Electron Devices 64 (7), 2927-2934, 2017 | 80 | 2017 |
| Vertical organic field-effect transistors for integrated optoelectronic applications H Yu, Z Dong, J Guo, D Kim, F So ACS applied materials & interfaces 8 (16), 10430-10435, 2016 | 70 | 2016 |
| Tunneling current in HfO2 and Hf0. 5Zr0. 5O2-based ferroelectric tunnel junction Z Dong, X Cao, T Wu, J Guo Journal of Applied Physics 123 (9), 2018 | 34 | 2018 |
| Assessment of 2-D transition metal dichalcogenide FETs at sub-5-nm gate length scale Z Dong, J Guo IEEE Transactions on Electron Devices 64 (2), 622-628, 2017 | 30 | 2017 |
| Atomically thin CBRAM enabled by 2-D materials: Scaling behaviors and performance limits Z Dong, H Zhao, D DiMarzio, MG Han, L Zhang, J Tice, H Wang, J Guo IEEE Transactions on Electron Devices 65 (10), 4160-4166, 2018 | 22 | 2018 |
| On Low-Resistance Contacts to 2-D MoTe2 by Crystalline Phase Junctions Z Dong, J Guo IEEE Transactions on Electron Devices 65 (4), 1583-1588, 2018 | 8 | 2018 |
| Simulation Based Assessment of SRAM Data Retention Voltage Z Dong, X Cao, MAU Karim, V Joshi 20th International Symposium on Quality Electronic Design (ISQED), 98-103, 2019 | 3 | 2019 |
| A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory Z Du, Z Dong, K You, X Jia, Y Tian, Y Wang, Z Yang, X Fu, F Liu, Q Wang, ... IEEE Journal of the Electron Devices Society 10, 98-103, 2022 | 2 | 2022 |
| Corrigendum: Computational methods for 2D materials: discovery, property characterization, and application design (2017 J. Phys.: Condens. Matter 29 473001) JT Paul, AK Singh, Z Dong, HL Zhuang, BC Revard, B Rijal, M Ashton, ... Journal of Physics: Condensed Matter 32 (15), 159501, 2020 | 1 | 2020 |
| Methods of programming memory device Z Dong, V NAGAVARAPU, H Li US Patent US10937504B1, 2021 | | 2021 |
| Computational methods for 2D materials: discovery, property characterization, and application design (vol 29, 473001, 2017) JT Paul, AK Singh, Z Dong, HL Zhuang, BC Revard, B Rijal, M Ashton, ... JOURNAL OF PHYSICS-CONDENSED MATTER 32 (15), 2020 | | 2020 |
| Simulation of Nanoscale Transistors from Quantum and Multiphysics Perspective Z Dong, W Chen, WY Yin, J Guo Nanoscale Devices, 3-23, 2018 | | 2018 |
| On Image Charge Induced Barrier Lowering in Graphene–Semiconductor Contacts Z Dong, J Guo IEEE Transactions on Nanotechnology 17 (2), 320-324, 2018 | | 2018 |
| Thermal transport in single-layer MoS2 and black phosphorus transistors JG L. Liu, Z. Dong Science and Technology of 2D Materials, 2015 | | 2015 |
| On Low Resistance Contacts to Two-Dimensional MoTe2 by Crystalline Phase Junctions Z Dong, J Guo | | |
Jing GuoProfessor, University of FloridaVerified email at ufl.edu
