| Wakeup-free and endurance-robust ferroelectric field-effect transistor memory using high pressure annealing MC Nguyen, S Kim, K Lee, JY Yim, R Choi, D Kwon IEEE Electron Device Letters 42 (9), 1295-1298, 2021 | 44 | 2021 |
| Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy W Shin, KK Min, JH Bae, J Yim, D Kwon, Y Kim, J Yu, J Hwang, BG Park, ... Nanoscale 14 (6), 2177-2185, 2022 | 26 | 2022 |
| Synergistic improvement of sensing performance in ferroelectric transistor gas sensors using remnant polarization W Shin, J Yim, JH Bae, JK Lee, S Hong, J Kim, Y Jeong, D Kwon, RH Koo, ... Materials Horizons 9 (6), 1623-1630, 2022 | 14 | 2022 |
| Ferroelectric field-effect transistors for binary neural network with 3-D NAND architecture GH Lee, MS Song, S Kim, J Yim, S Hwang, J Yu, D Kwon, H Kim IEEE Transactions on Electron Devices 69 (11), 6438-6445, 2022 | 11 | 2022 |
| Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition AHT Nguyen, MC Nguyen, AD Nguyen, JY Yim, JH Kim, NH Park, ... Nano Convergence 9 (1), 45, 2022 | 6 | 2022 |
| Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0. 5Zr0. 5O2 C Han, KR Kwon, J Kim, J Yim, S Kim, EC Park, JW You, S Jeong, R Choi, ... Materials Science in Semiconductor Processing 160, 107401, 2023 | 4 | 2023 |
| Effects of RTA Rising Time on Ferroelectric Characteristics of HfZrO2 C Han, SJ Kwon, J Yim, J Kim, S Kim, S Jeong, EC Park, JW You, R Choi, ... IEEE Transactions on Electron Devices 69 (6), 3499-3502, 2022 | 4 | 2022 |
| Ferroelectric Field-Effect Transistor Synaptic Device with Hafnium-silicate Interlayer SW Kim, W Shin, M Kim, KR Kwon, J Yim, J Kim, C Han, S Jeong, EC Park, ... IEEE Electron Device Letters, 2023 | 2 | 2023 |
| All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor with Amorphous Indium–Gallium–Zinc Oxide Channel S Jeong, C Han, J Yim, J Kim, KR Kwon, S Kim, EC Park, JW You, R Choi, ... IEEE Electron Device Letters, 2023 | 2 | 2023 |
| Toward Optimized In‐Memory Reinforcement Learning: Leveraging 1/f Noise of Synaptic Ferroelectric Field‐Effect‐Transistors for Efficient Exploration J Kim, W Shin, J Yim, D Kwon, D Kwon, JH Lee Advanced Intelligent Systems, 2300763, 2024 | 1 | 2024 |
| Ferroelectric polarization-switching acceleration of sputtered Hf0. 5Zr0. 5O2 with defect-induced polarization of interlayer C Han, J Yim, A Nguyen, J Kim, KR Kwon, S Kim, S Jeong, EC Park, ... Journal of Alloys and Compounds 960, 170516, 2023 | 1 | 2023 |
| Effects of Deposition Power and Thermal Treatment on Ferroelectric Properties of Sputtered HfZrO C Han, KR Kwon, J Yim, J Kim, S Kim, S Jeong, EC Park, JW You, R Choi, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Scaling Effects on Memory Characteristics of Ferroelectric Field-effect Transistors K Lee, J Yim, W Shin, S Kim, D Kwon IEEE Electron Device Letters, 2024 | | 2024 |
| Analysis on Degradation of Ferroelectric Memory S Kim, J Kim, S Jeong, K Kwon, C Han, E Park, J Yim, B Kwak, J You, ... 한국차세대컴퓨팅학회 학술대회, 212-213, 2022 | | 2022 |
| Defect characterization in floating body transistors using a single pulse charge pumping method MC Nguyen, AHT Nguyen, J Yim, AD Nguyen, M Kim, J Kim, J Baek, ... Journal of Vacuum Science & Technology B 39 (5), 2021 | | 2021 |
| Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors MC Nguyen, AHT Nguyen, J Yim, AD Nguyen, M Kim, J Kim, J Beak, ... Journal of Vacuum Science & Technology B 39 (3), 2021 | | 2021 |
Rino ChoiProfessor of Materials Science and Eng., Inha UniversityVerified email at inha.ac.kr
