| High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment Y Cai, Y Zhou, KJ Chen, KM Lau IEEE Electron Device Letters 26 (7), 435-437, 2005 | 808 | 2005 |
| Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode Y Cai, Y Zhou, KM Lau, KJ Chen IEEE transactions on electron devices 53 (9), 2207-2215, 2006 | 644 | 2006 |
| Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology HV Han, HY Lin, CC Lin, WC Chong, JR Li, KJ Chen, P Yu, TM Chen, ... Optics express 23 (25), 32504-32515, 2015 | 275 | 2015 |
| Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology KM Lau, Z Liu US Patent 8,642,363, 2014 | 228 | 2014 |
| Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP pin photodiodes transferred on silicon P Chen, WV Chen, PKL Yu, CW Tang, KM Lau, L Mawst, C Paulson, ... Applied Physics Letters 94 (1), 2009 | 211 | 2009 |
| InP Layer Transfer with Masked Implantation W Chen, P Bandaru, CW Tang, KM Lau, TF Kuech, SS Lau Electrochemical and Solid-State Letters 12 (4), H149, 2009 | 205 | 2009 |
| Optical cross-talk reduction in a quantum-dot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold HY Lin, CW Sher, DH Hsieh, XY Chen, HMP Chen, TM Chen, KM Lau, ... Photonics Research 5 (5), 411-416, 2017 | 196 | 2017 |
| Enhancement-mode III-N devices, circuits, and methods J Chen, Y Cai, KM Lau US Patent 7,932,539, 2011 | 183 | 2011 |
| Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon Q Li, KW Ng, KM Lau Applied Physics Letters 106 (7), 2015 | 176 | 2015 |
| 1.3 μm submilliamp threshold quantum dot micro-lasers on Si Y Wan, J Norman, Q Li, MJ Kennedy, D Liang, C Zhang, D Huang, ... Optica 4 (8), 940-944, 2017 | 165 | 2017 |
| Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template CH Chiu, HH Yen, CL Chao, ZY Li, P Yu, HC Kuo, T Lu, SC Wang, ... Applied Physics Letters 93 (8), 2008 | 154 | 2008 |
| High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits Y Cai, Z Cheng, Z Yang, CW Tang, KM Lau, KJ Chen IEEE electron device letters 28 (5), 328-331, 2007 | 137 | 2007 |
| Enhancement-ModeMISHFETs R Wang, Y Cai, CW Tang, KM Lau, KJ Chen IEEE electron device letters 27 (10), 793-795, 2006 | 135 | 2006 |
| AlGaN-GaN double-channel HEMTs R Chu, Y Zhou, J Liu, D Wang, KJ Chen, KM Lau IEEE Transactions on electron devices 52 (4), 438-446, 2005 | 135 | 2005 |
| Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si J Norman, MJ Kennedy, J Selvidge, Q Li, Y Wan, AY Liu, PG Callahan, ... Optics Express 25 (4), 3927-3934, 2017 | 125 | 2017 |
| GaN-based LED micro-displays for wearable applications Z Liu, WC Chong, KM Wong, KM Lau Microelectronic Engineering 148, 98-103, 2015 | 125 | 2015 |
| 1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below A/cm2 X Lu, X Zhou, H Jiang, KW Ng, Z Chen, Y Pei, KM Lau, G Wang IEEE Electron Device Letters 41 (3), 449-452, 2020 | 122 | 2020 |
| Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics Q Li, KM Lau Progress in Crystal Growth and Characterization of Materials 63 (4), 105-120, 2017 | 122 | 2017 |
| Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators UsingPlasma Treatment Y Cai, Z Cheng, WCW Tang, KM Lau, KJ Chen IEEE transactions on electron devices 53 (9), 2223-2230, 2006 | 120 | 2006 |
| AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement J Liu, Y Zhou, J Zhu, KM Lau, KJ Chen IEEE Electron Device Letters 27 (1), 10-12, 2005 | 120 | 2005 |
Qiang LiSenior Lecturer (Associate Professor), School of Physics and Astronomy, Cardiff UniversityVerified email at cardiff.ac.uk
