| Characteristics and mechanism of conduction/set process in resistance switching random-access memories N Xu, L Liu, X Sun, X Liu, D Han, Y Wang, R Han, J Kang, B Yu Applied Physics Letters 92 (23), 232112, 2008 | 433 | 2008 |
| Gd-doping effect on performance of based resistive switching memory devices using implantation approach H Zhang, L Liu, B Gao, Y Qiu, X Liu, J Lu, R Han, J Kang, B Yu Applied Physics Letters 98 (4), 042105, 2011 | 220 | 2011 |
| Unified physical model of bipolar oxide-based resistive switching memory B Gao, B Sun, H Zhang, L Liu, X Liu, R Han, J Kang, B Yu IEEE Electron Device Letters 30 (12), 1326-1328, 2009 | 203 | 2009 |
| Ionic doping effect in resistive switching memory H Zhang, B Gao, B Sun, G Chen, L Zeng, L Liu, X Liu, J Lu, R Han, J Kang, ... Applied Physics Letters 96 (12), 123502, 2010 | 200 | 2010 |
| 34.5 m underwater optical wireless communication with 2.70 Gbps data rate based on a green laser diode with NRZ-OOK modulation X Liu, S Yi, X Zhou, Z Fang, ZJ Qiu, L Hu, C Cong, L Zheng, R Liu, P Tian* Optics express 25 (22), 27937-27947, 2017 | 198 | 2017 |
| A physics-based compact model of metal-oxide-based RRAM DC and AC operations P Huang, XY Liu, B Chen, HT Li, YJ Wang, YX Deng, KL Wei, L Zeng, ... IEEE transactions on electron devices 60 (12), 4090-4097, 2013 | 188 | 2013 |
| High-speed underwater optical wireless communication using a blue GaN-based micro-LED P Tian*, X Liu, S Yi, Y Huang, S Zhang, X Zhou, L Hu, L Zheng, R Liu Optics express 25 (2), 1193-1201, 2017 | 183 | 2017 |
| High-bandwidth white-light system combining a micro-LED with perovskite quantum dots for visible light communication S Mei†, X Liu†, W Zhang, R Liu, L Zheng, R Guo*, P Tian* ACS applied materials & interfaces 10 (6), 5641-5648, 2018 | 182 | 2018 |
| RRAM crossbar array with cell selection device: A device and circuit interaction study Y Deng, P Huang, B Chen, X Yang, B Gao, J Wang, L Zeng, G Du, J Kang, ... IEEE transactions on Electron Devices 60 (2), 719-726, 2012 | 182 | 2012 |
| Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems B Gao, Y Bi, HY Chen, R Liu, P Huang, B Chen, L Liu, X Liu, S Yu, ... ACS nano 8 (7), 6998-7004, 2014 | 179 | 2014 |
| Reconfigurable nonvolatile logic operations in resistance switching crossbar array for largescale circuits P Huang, J Kang, Y Zhao, S Chen, R Han, Z Zhou, Z Chen, W Ma, M Li, ... Advanced Materials 28 (44), 9758-9764, 2016 | 176 | 2016 |
| Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology B Gao, HW Zhang, S Yu, B Sun, LF Liu, XY Liu, Y Wang, RQ Han, ... 2009 Symposium on VLSI Technology, 30-31, 2009 | 168 | 2009 |
| Oxide-based RRAM switching mechanism: A new ion-transport-recombination model B Gao, S Yu, N Xu, LF Liu, B Sun, XY Liu, RQ Han, JF Kang, B Yu, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 167 | 2008 |
| Direct Observations of Nanofilament Evolution in Switching Processes in HfO2Based Resistive Random Access Memory by In Situ TEM Studies C Li, B Gao, Y Yao, X Guan, X Shen, Y Wang, P Huang, L Liu, X Liu, J Li, ... Advanced Materials 29 (10), 1602976, 2017 | 163 | 2017 |
| Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention N Xu, LF Liu, X Sun, C Chen, Y Wang, DD Han, XY Liu, RQ Han, JF Kang, ... Semiconductor science and technology 23 (7), 075019, 2008 | 151 | 2008 |
| Improved uniformity of resistive switching behaviors in HfO2 thin films with embedded Al layers S Yu, B Gao, H Dai, B Sun, L Liu, X Liu, R Han, J Kang, B Yu Electrochemical and Solid-State Letters 13 (2), H36, 2009 | 140 | 2009 |
| Recent progress in and perspectives of underwater wireless optical communication S Zhu, X Chen, X Liu, G Zhang, P Tian* Progress in Quantum Electronics 73, 100274, 2020 | 128 | 2020 |
| Resistive Switching in Films for Nonvolatile Memory Application X Sun, B Sun, L Liu, N Xu, X Liu, R Han, J Kang, G Xiong, TP Ma IEEE electron device letters 4 (30), 334-336, 2009 | 127 | 2009 |
| A SPICE model of resistive random access memory for large-scale memory array simulation H Li, P Huang, B Gao, B Chen, X Liu, J Kang IEEE Electron Device Letters 35 (2), 211-213, 2013 | 121 | 2013 |
| Hydrogen PeroxideTreated Carbon Dot Phosphor with a BathochromicShifted, AggregationEnhanced Emission for LightEmitting Devices and Visible Light Communication Z Zhou, P Tian, X Liu, S Mei, D Zhou, D Li, P Jing, W Zhang, R Guo*, ... Advanced Science 5 (8), 1800369, 2018 | 119 | 2018 |
Pengfei TianFudan University在 fudan.edu.cn 的电子邮件经过验证
