| Disorder effect on the anisotropic resistivity of phosphorene determined by a tight-binding model CJ Páez, K DeLello, D Le, ALC Pereira, ER Mucciolo Physical Review B 94 (16), 165419, 2016 | 23 | 2016 |
| Photoluminescence of monolayer transition metal dichalcogenides integrated with VO2 YC Lin, K DeLello, HT Zhang, K Zhang, Z Lin, M Terrones, ... Journal of Physics: Condensed Matter 28 (50), 504001, 2016 | 17 | 2016 |
| Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit DM Dryden, KJ Liddy, AE Islam, JC Williams, DE Walker, NS Hendricks, ... IEEE Electron Device Letters 43 (8), 1307-1310, 2022 | 14 | 2022 |
| Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide-catalyzed epitaxy P Vogt, FVE Hensling, K Azizie, JP McCandless, J Park, K DeLello, ... Physical Review Applied 17 (3), 034021, 2022 | 11 | 2022 |
| Defect Engineering at the Al2O3/(010) β-Ga2O3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals AE Islam, C Zhang, K DeLello, DA Muller, KD Leedy, S Ganguli, ... IEEE Transactions on Electron Devices 69 (10), 5656-5663, 2022 | 7 | 2022 |
