| Electrically injected GeSn lasers on Si operating up to 100 K Y Zhou, Y Miao, S Ojo, H Tran, G Abernathy, JM Grant, S Amoah, ... Optica 7 (8), 924-928, 2020 | 174 | 2020 |
| Si-based GeSn photodetectors toward mid-infrared imaging applications H Tran, T Pham, J Margetis, Y Zhou, W Dou, PC Grant, JM Grant, ... ACS Photonics 6 (11), 2807-2815, 2019 | 170 | 2019 |
| Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ... Optics express 24 (5), 4519-4531, 2016 | 142 | 2016 |
| Systematic study of Ge1− xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ... Journal of Applied Physics 119 (10), 2016 | 138 | 2016 |
| Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si Y Zhou, W Dou, W Du, S Ojo, H Tran, SA Ghetmiri, J Liu, G Sun, R Soref, ... Acs Photonics 6 (6), 1434-1441, 2019 | 134 | 2019 |
| Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff BR Conley, J Margetis, W Du, H Tran, A Mosleh, SA Ghetmiri, J Tolle, ... Applied Physics Letters 105 (22), 2014 | 88 | 2014 |
| High performance Ge0. 89Sn0. 11 photodiodes for low-cost shortwave infrared imaging H Tran, T Pham, W Du, Y Zhang, PC Grant, JM Grant, G Sun, RA Soref, ... Journal of Applied Physics 124 (1), 2018 | 69 | 2018 |
| All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K J Margetis, Y Zhou, W Dou, PC Grant, B Alharthi, W Du, A Wadsworth, ... Applied Physics Letters 113 (22), 2018 | 56 | 2018 |
| Electrically injected GeSn lasers with peak wavelength up to 2.7 μm Y Zhou, S Ojo, CW Wu, Y Miao, H Tran, JM Grant, G Abernathy, S Amoah, ... Photonics Research 10 (1), 222-229, 2022 | 39 | 2022 |
| UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices PC Grant, W Dou, B Alharthi, JM Grant, H Tran, G Abernathy, A Mosleh, ... Optical Materials Express 9 (8), 3277-3291, 2019 | 34 | 2019 |
| Study of GeSn mid-infrared photodetectors for high frequency applications H Tran, CG Littlejohns, DJ Thomson, T Pham, A Ghetmiri, A Mosleh, ... Frontiers in Materials 6, 278, 2019 | 30 | 2019 |
| Crystalline GeSn growth by plasma enhanced chemical vapor deposition W Dou, B Alharthi, PC Grant, JM Grant, A Mosleh, H Tran, W Du, ... Optical Materials Express 8 (10), 3220-3229, 2018 | 23 | 2018 |
| Photovoltage spectroscopy of direct and indirect bandgaps of strained Ge1-xSnx thin films on a Ge/Si (001) substrate SV Kondratenko, YV Hyrka, YI Mazur, AV Kuchuk, W Dou, H Tran, ... Acta Materialia 171, 40-47, 2019 | 21 | 2019 |
| Study of material and optical properties of SixGe1-x-ySny alloys for Si-based optoelectronic device applications B Alharthi, J Margetis, H Tran, S Al-kabi, W Dou, SA Ghetmiri, A Mosleh, ... Optical Materials Express 7 (10), 3517-3528, 2017 | 13 | 2017 |
| Enhancement of material quality of (Si) GeSn films grown by SnCl4 precursor A Mosleh, MA Alher, L Cousar, H Abusafe, W Dou, P Grant, S Al-Kabi, ... ECS Transactions 69 (5), 279, 2015 | 13 | 2015 |
| High-temperature analysis of GaN-based MQW photodetector for optical galvanic isolations in high-density integrated power modules S Madhusoodhanan, A Sabbar, H Tran, B Dong, J Wang, A Mantooth, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (4 …, 2020 | 12 | 2020 |
| Development of SiGeSn technique towards mid-infrared devices in silicon photonics W Du, S Al-Kabi, S Ghetmiri, H Tran, T Pham, B Alharthi, A Mosleh, ... ECS Transactions 75 (8), 231, 2016 | 11 | 2016 |
| Optica 7, 924 (2020) Y Zhou, Y Miao, S Ojo, H Tran, G Abernathy, JM Grant, S Amoah, ... Article, 0 | 10 | |
| Silicon-based GeSn photodetector and light emitter towards mid-Infrared applications W Du, S Ghetmiri, S Al-Kabi, A Mosleh, T Pham, Y Zhou, H Tran, G Sun, ... Silicon Photonics XII 10108, 205-212, 2017 | 9 | 2017 |
| Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 μm for Low-Cost Infrared Imaging H Tran, T Pham, J Margetis, Y Zhou, W Dou, PC Grant, JM Grant, S Alkabi, ... 2019 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2019 | 8 | 2019 |
Shui-Qing (Fisher) YuUniversity of ArkansasVerified email at uark.edu
