‪Jae-Hyeun Park‬ - ‪Google Scholar‬

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Cited by

	All	Since 2019
Citations	150	150
h-index	3	3
i10-index	3	3

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46

23

2019202020212022202320241 21 31 36 45 16

Co-authors

Seunghwan KimKorea Institute of Science and TechnologyVerified email at kist.re.kr
Kim, Gwang-SikSamsung ElectronicsVerified email at korea.ac.kr
Park, EuyjinKorea UniversityVerified email at korea.ac.kr
Taehyun KimKorea UniversityVerified email at korea.ac.kr
Seung-Geun KimKorea UniversityVerified email at korea.ac.kr
June Parkthe Department of Nano Semiconductor Engineering, Korea UniversityVerified email at korea.ac.kr

Jae-Hyeun Park

Jae-Hyeun Park

Korea University

Verified email at korea.ac.kr


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Infrared Detectable MoS₂ Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse SG Kim, SH Kim, J Park, GS Kim, JH Park, KC Saraswat, J Kim, HY Yu ACS nano 13 (9), 10294-10300, 2019	100	2019
Nitrogen-induced filament confinement technique for a highly reliable hafnium-based electrochemical metallization threshold switch and its application to flexible logic circuits JH Park, SH Kim, SG Kim, K Heo, HY Yu ACS applied materials & interfaces 11 (9), 9182-9189, 2019	32	2019
An artificial neuron using a bipolar electrochemical metallization switch and its enhanced spiking properties through filament confinement T Kim, SH Kim, JH Park, J Park, E Park, SG Kim, HY Yu Advanced Electronic Materials 7 (1), 2000410, 2021	16	2021
Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two‐Dimensional PtSe₂ Insertion Layer MS Kim, E Park, SG Kim, JH Park, SH Kim, KH Han, HY Yu Advanced Materials Interfaces 10 (7), 2202296, 2023	2	2023

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Articles 1–4