| Hybrid termination with wide trench for 4H-SiC super-junction devices H Wang, C Wang, B Wang, H Long, K Sheng IEEE Electron Device Letters 42 (2), 216-219, 2020 | 8 | 2020 |
| Design and implement of 10 kV SiC JBS based on exponential varying field limiting rings H Long, Q Guo, K Sheng 2018 IEEE 2nd International Electrical and Energy Conference (CIEEC), 678-681, 2018 | 5 | 2018 |
| Understanding the breakdown asymmetry of 4H-SiC power diodes with extended defects at locations along step-flow direction H Long, N Ren, Q Guo, X Gan, L Chen, W Zhang, J Zhu, F Wei, K Sheng Journal of Applied Physics 128 (16), 2020 | 4 | 2020 |
| Practical one-step solution of smoothly tapered junction termination extension for high voltage SiC gate turn-off thyristor H Long, Q Guo, K Sheng 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 4 | 2019 |
| Single-mask implantation-free technique based on aperture density modulation for termination in high-voltage SiC thyristors H Long, H Xu, H Wang, N Ren, Q Guo, K Sheng IEEE Transactions on Electron Devices 68 (3), 1181-1184, 2021 | 3 | 2021 |
| Modeling and Optimization of Smoothly Tapered Junction Termination Extension for High-Voltage SiC BJTs and Thyristors by Simulation H Long, L Huang, F Shao, N Ren, K Sheng IEEE Transactions on Electron Devices 69 (3), 1169-1175, 2022 | 1 | 2022 |
| Direct barrier evaluation method for SiC devices with junction barrier Schottky structures demonstrated with quasi-continuous spacing variation H Long, N Ren, K Sheng AIP Advances 12 (8), 2022 | | 2022 |
