| The band-gap bowing of alloys SR Lee, AF Wright, MH Crawford, GA Petersen, J Han, RM Biefeld Applied physics letters 74 (22), 3344-3346, 1999 | 278 | 1999 |
| The effect of on morphology evolution during GaN metalorganic chemical vapor deposition J Han, TB Ng, RM Biefeld, MH Crawford, DM Follstaedt Applied physics letters 71 (21), 3114-3116, 1997 | 199 | 1997 |
| A GaAsxP1−x/GaP strainedlayer superlattice GC Osbourn, RM Biefeld, PL Gourley Applied Physics Letters 41 (2), 172-174, 1982 | 194 | 1982 |
| The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials RM Biefeld Materials Science and Engineering: R: Reports 36 (4), 105-142, 2002 | 155 | 2002 |
| Midwave (4 μm) infrared lasers and lightemitting diodes with biaxially compressed InAsSb active regions SR Kurtz, RM Biefeld, LR Dawson, KC Baucom, AJ Howard Applied physics letters 64 (7), 812-814, 1994 | 133 | 1994 |
| The preparation of InSb and InAs1− x Sbx by metalorganic chemical vapor deposition RM Biefeld Journal of Crystal growth 75 (2), 255-263, 1986 | 122 | 1986 |
| Ordering-induced band-gap reduction in InAs 1− x Sb x (x≊ 0.4) alloys and superlattices SR Kurtz, LR Dawson, RM Biefeld, DM Follstaedt, BL Doyle Physical Review B 46 (3), 1909, 1992 | 121 | 1992 |
| InAsSbbased midinfrared lasers (3.8–3.9 μm) and lightemitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition AA Allerman, RM Biefeld, SR Kurtz Applied physics letters 69 (4), 465-467, 1996 | 117 | 1996 |
| Strain relief in compositionally graded InAsxSb1− x buffer layers and InAsxSb1− x/InSb strained-layer superlattices grown by MOCVD RM Biefeld, CR Hills, SR Lee Journal of crystal growth 91 (4), 515-526, 1988 | 89 | 1988 |
| OMVPE growth and gas-phase reactions of AlGaN for UV emitters J Han, JJ Figiel, MH Crawford, MA Banas, ME Bartram, RM Biefeld, ... Journal of crystal growth 195 (1-4), 291-296, 1998 | 85 | 1998 |
| Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm SR Kurtz, RM Biefeld, AA Allerman, AJ Howard, MH Crawford, ... Applied physics letters 68 (10), 1332-1334, 1996 | 84 | 1996 |
| Ionic Conductivity of Li2 OBased Mixed Oxides and the Effects of Moisture and LiOH on Their Electrical and Structural Properties RM Biefeld, RT Johnson Journal of the Electrochemical Society 126 (1), 1, 1979 | 84 | 1979 |
| Strain measurements by channeling angular scans ST Picraux, LR Dawson, GC Osbourn, RM Biefeld, WK Chu Applied physics letters 43 (11), 1020-1022, 1983 | 78 | 1983 |
| Extended infrared response of InAsSb strainedlayer superlattices SR Kurtz, GC Osbourn, RM Biefeld, LR Dawson, HJ Stein Applied physics letters 52 (10), 831-833, 1988 | 74 | 1988 |
| Photoluminescence and the band structure of InAsSb strainedlayer superlattices SR Kurtz, GC Osbourn, RM Biefeld, SR Lee Applied physics letters 53 (3), 216-218, 1988 | 70 | 1988 |
| Ionic conductivity in solid electrolytes based on lithium aluminosilicate glass and glassceramic RT Johnson, RM Biefeld, ML Knotek, B Morosin Journal of the Electrochemical Society 123 (5), 680, 1976 | 68 | 1976 |
| In situ measurement of the metalorganic and hydride partial pressures in a MOCVD reactor using ultraviolet absorption spectroscopy GA Hebner, KP Killeen, RM Biefeld Journal of crystal growth 98 (3), 293-301, 1989 | 65 | 1989 |
| The Preparation and Characterization of Strained-Layer Superlattices in the GaAs + GaP System IJ Biefeld, R. M., Osbourn, G. C., Gourley, P. L., and Fritz Journal of Electronic Materials 12 (5), 903, 1983 | 65 | 1983 |
| Principles and applications of semiconductor strained-layer superlattices GC Osboum, PL Gourley, IJ Fritz, RM Biefeld, LR Dawson, TE Zipperian Semiconductors and Semimetals 24, 459-503, 1987 | 64 | 1987 |
| The preparation of device quality gallium phosphide by metal organic chemical vapor deposition RM Biefeld Journal of Crystal Growth 56 (2), 382-388, 1982 | 60 | 1982 |
L. Ralph DawsonResearch Professor of ECE, University of New Mexico在 chtm.unm.edu 的电子邮件经过验证
