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Md. Aftab Baig
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Ultra-Low Power Robust 3bit/cell Hf0.5Zr0.5O2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology
S De, DD Lu, HH Le, S Mazumder, YJ Lee, WC Tseng, BH Qiu, MA Baig, ...
2021 symposium on VLSI technology, 1-2, 2021
762021
Uniform crystal formation and electrical variability reduction in hafnium-oxide-based ferroelectric memory by thermal engineering
S De, BH Qiu, WX Bu, MA Baig, PJ Sung, CJ Su, YJ Lee, DD Lu
ACS Applied Electronic Materials 3 (2), 619-628, 2021
542021
Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications
S De, MA Baig, BH Qiu, F Müller, HH Le, M Lederer, T Kämpfe, T Ali, ...
Frontiers in Nanotechnology 3, 826232, 2022
472022
Robust binary neural network operation from 233 K to 398 K via gate stack and bias optimization of ferroelectric FinFET synapses
S De, HH Le, BH Qiu, MA Baig, PJ Sung, CJ Su, YJ Lee, DD Lu
IEEE Electron Device Letters 42 (8), 1144-1147, 2021
342021
First demonstration of heterogeneous IGZO/Si CFET monolithic 3-D integration with dual work function gate for ultralow-power SRAM and RF applications
SW Chang, TH Lu, CY Yang, CJ Yeh, MK Huang, CF Meng, PJ Chen, ...
IEEE Transactions on Electron Devices 69 (4), 2101-2107, 2022
322022
Computationally efficient compact model for ferroelectric field-effect transistors to simulate the online training of neural networks
DD Lu, S De, MA Baig, BH Qiu, YJ Lee
Semiconductor Science and Technology 35 (9), 095007, 2020
322020
Neuromorphic computing with fe-finfets in the presence of variation
S De, MA Baig, BH Qiu, HH Le, YJ Lee, D Lu
2022 international symposium on vlsi technology, systems and applications …, 2022
262022
Tri-gate ferroelectric fet characterization and modelling for online training of neural networks at room temperature and 233k
S De, MA Baig, BH Qiu, D Lu, PJ Sung, FK Hsueh, YJ Lee, CJ Su
2020 Device Research Conference (DRC), 1-2, 2020
242020
Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack
MA Baig, HH Le, S De, CW Chang, CC Hsieh, XS Huang, YJ Lee, DD Lu
Semiconductor Science and Technology 37 (2), 024001, 2021
202021
Neuromorphic computing with ferroelectric finfets in the presence of temperature, process variation, device aging and flicker noise
S De, BH Qiu, WX Bu, MA Baig, CJ Su, YJ Lee, D Lu
arXiv preprint arXiv:2103.13302, 2021
162021
3-d monolithic stacking of complementary-fet on cmos for next generation compute-in-memory sram
MA Baig, CJ Yeh, SW Chang, BH Qiu, XS Huang, CH Tsai, YM Chang, ...
IEEE Journal of the Electron Devices Society 11, 107-113, 2022
72022
Alleviation of temperature variation induced accuracy degradation in ferroelectric finfet based neural network
S De, HH Le, MA Baig, YJ Lee, DD Lu, T Kämpfe
arXiv preprint arXiv:2103.03111, 2021
52021
Roadmap of ferroelectric memories: From discovery to 3D integration
S De, M Lederer, Y Raffel, F Müller, D Lehninger, A Sunbul, T Ali, ...
Authorea Preprints, 2023
42023
Stochastic variations in nanoscale HZO based ferroelectric finFETs: A synergistic approach of READ optimization and hybrid precision mixed signal WRITE operation to mitigate …
S De, MA Baig, BH Qiu, HH Le, PJ Sung, CJ Su, YJ Lee, D Lu
arXiv preprint arXiv:2008.10363, 2020
32020
CIMulator: a comprehensive simulation platform for computing-in-memory circuit macros with low bit-width and real memory materials
HH Le, MA Baig, WC Hong, CH Tsai, CJ Yeh, FX Liang, I Huang, WT Tsai, ...
arXiv preprint arXiv:2306.14649, 2023
12023
Random variation in nanoscale HfZrO2 ferroelectric FinFETs: Physical origin and neuromorphic system implications
S De, MA Baig, BH Qiu, D Lu, YJ Lee, CJ Su, PJ Sung, FK Hsueh
MAR. POLLUT. BULL., VOL, 11, 2020
12020
CIMulator: Evaluating Neuromorphic Accelerators with HZO FefinFET-Based Synaptic Device
HH Le, HY Lu, MA Baig, S De, C Lin, DD Lu
2024 7th International Conference on Green Technology and Sustainable …, 2024
2024
Analyzing the Effects of Non-Ideal Synaptic Devices on Computing-in-Memory with Online Training Using the Accumulated Weight Update Algorithm
MA Baig, HY Lu, CH Tsai, WC Hung, HH Le, S De, NY Chen, WJ Lee, ...
Authorea Preprints, 2023
2023
Characterization and Modelling of Gate Length Impact on the Transient Negative Capacitance Induced Control of Short Channel Effect in Ferroelectric Fin-FETS
S De, BH Qiu, JY Ciou, CJ Lin, WCT Chien-Wei-Wang, M Aftab Baig, ...
arXiv e-prints, arXiv: 2007.13168, 2020
2020
Formation of Uniform Crystal and Reduction of Electrical Variation in HfZrO Ferroelectric Memory by Thermal Engineering
S De, BH Qiu, MA Baig, DD Lu, YJ Lee
arXiv preprint arXiv:2006.10691, 2020
2020
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