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Jakub Iwański
Jakub Iwański
Verified email at fuw.edu.pl
Title
Cited by
Cited by
Year
Heteroepitaxial growth of high optical quality, wafer-scale van der Waals heterostrucutres
K Ludwiczak, AK Da̧browska, J Binder, M Tokarczyk, J Iwański, ...
ACS Applied Materials & Interfaces 13 (40), 47904-47911, 2021
212021
Delamination of large area layers of hexagonal boron nitride grown by MOVPE
J Iwański, AK Dąbrowska, M Tokarczyk, J Binder, R Stępniewski, ...
Acta Phys. Pol. A 139, 457-461, 2021
72021
Effective substrate for the growth of multilayer h-BN on sapphire—substrate off-cut, pre-growth, and post-growth conditions in metal-organic vapor phase epitaxy
M Tokarczyk, AK Dąbrowska, G Kowalski, R Bożek, J Iwański, J Binder, ...
2D Materials 10 (2), 025010, 2023
52023
Temperature induced giant shift of phonon energy in epitaxial boron nitride layers
J Iwański, P Tatarczak, M Tokarczyk, AK Da̧browska, J Pawłowski, ...
Nanotechnology 34 (1), 015202, 2022
52022
Growth temperature induced changes of luminescence in epitaxial BN: from colour centres to donor–acceptor recombination
KP Korona, J Binder, AK Dąbrowska, J Iwański, A Reszka, T Korona, ...
Nanoscale 15 (22), 9864-9877, 2023
42023
Strain modulation of epitaxial h-BN on sapphire: the role of wrinkle formation for large-area two-dimensional materials
P Tatarczak, J Iwański, AK Dąbrowska, M Tokarczyk, J Binder, ...
Nanotechnology 35 (17), 175703, 2024
32024
Defects in layered boron nitride grown by Metal Organic Vapor Phase Epitaxy: luminescence and positron annihilation studies
AK Dąbrowska, J Binder, I Prozheev, F Tuomisto, J Iwański, M Tokarczyk, ...
Journal of Luminescence 269, 120486, 2024
22024
All-BN distributed Bragg reflectors fabricated in a single MOCVD process
A Ciesielski, J Iwański, P Wróbel, R Bożek, S Kret, J Turczyński, J Binder, ...
Nanotechnology 35 (5), 055202, 2023
22023
Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature
J Iwański, J Kierdaszuk, A Ciesielski, J Binder, A Drabińska, A Wysmołek
Diamond and Related Materials, 111291, 2024
2024
Revealing Polytypism in 2D Boron Nitride with UV Photoluminescence
J Iwański, KP Korona, M Tokarczyk, G Kowalski, AK Dąbrowska, ...
arXiv preprint arXiv:2405.19126, 2024
2024
Bandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlN
J Iwański, M Tokarczyk, AK Dąbrowska, J Pawłowski, P Tatarczak, ...
arXiv preprint arXiv:2305.15810, 2023
2023
The impact of carbon impurity concentration on the properties of single photon emitting defects in epitaxial hBN
P Tatarczak, AK Dąbrowska, J Iwański, M Tokarczyk, J Binder, ...
Transfer powierzchniowo dużych warstw heksagonalnego azotku boru na dowolne podłoża
J Iwański, K Ludwiczak, AK Dąbrowska, M Tokarczyk, J Binder, K Pakuła, ...
Transfer of large area layers of hexagonal boron nitride to arbitrary substrates
J Iwański, K Ludwiczak, AK Dąbrowska, M Tokarczyk, J Binder, K Pakuła, ...
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