| A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors W Amir, JW Shin, KY Shin, JM Kim, CY Cho, KH Park, T Hoshi, T Tsutsumi, ... Scientific reports 11 (1), 22401, 2021 | 15 | 2021 |
| Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity S Chakraborty, W Amir, JW Shin, KY Shin, CY Cho, JM Kim, T Hoshi, ... Materials 15 (23), 8415, 2022 | 9 | 2022 |
| Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O Plasma Treatment W Amir, JW Shin, KY Shin, S Chakraborty, CY Cho, JM Kim, ST Lee, ... IEEE Transactions on Electron Devices, 2023 | 8 | 2023 |
| Comprehensive Analysis of Quantum Mechanical Effects of Interface Trap and Border Trap Densities of High-k Al2O3/In0.53Ga0.47As on a 300-mm Si Substrate W Amir, DH Kim, TW Kim IEEE Access 8, 211464-211473, 2020 | 6 | 2020 |
| Trap Behavior of Metamorphic HEMTs with Pulsed IV and Noise Measurement KY Shin, JW Shin, S Chakraborty, W Amir, CS Shin, TW Kim ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022 | 3 | 2022 |
| Instability Assessment of AlGaN/GaN High Electron Mobility Transistors Under High Drain Current Condition W Amir, JW Shin, S Chakraborty, KY Shin, T Hoshi, T Tsutsumi, ... 2022 Asia-Pacific Microwave Conference (APMC), 184-186, 2022 | 2 | 2022 |
| Vertical homo-junction In0. 53Ga0. 47As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade JM Baek, HJ Kim, JH Yoo, JW Shin, KY Shin, W Amir, G Ju, HJ Kim, J Oh, ... Solid-State Electronics 197, 108447, 2022 | 2 | 2022 |
| An Explicit Thermal Resistance Model Regarding Self-Heating Effect of AlGaN/GaN High Electron Mobility Transistor S Chakraborty, JW Shin, W Amir, KY Shin, TW Kim Materials Science Forum 1074, 125-131, 2022 | 2 | 2022 |
| Impact of Charge-Trapping Effects on Reliability Instability in AlxGa1−xN/GaN High-Electron-Mobility Transistors with Various Al Compositions W Amir, S Chakraborty, HM Kwon, TW Kim Materials 16 (12), 4469, 2023 | 1 | 2023 |
| New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors S Chakraborty, W Amir, HM Kwon, TW Kim Electronics 12 (14), 3044, 2023 | 1 | 2023 |
| Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in AlxGa1‐xN/GaN High Electron Mobility Transistors W Amir, JW Shin, S Chakraborty, KY Shin, T Hoshi, T Tsutsumi, ... physica status solidi (a), 2023 | | 2023 |
| Effect of stress voltage and temperature on the reliability of AlGaN/GaN HEMTs for RF and Microwave application S Chakraborty, W Amir, T Hoshi, T Tsutsumi, H Sugiyama, TW Kim physica status solidi (a), 2023 | | 2023 |
| Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression S Chakraborty, JW Shin, W Amir, KY Shin, T Hoshi, T Tsutsumi, ... Solid-State Electronics 210, 108788, 2023 | | 2023 |
| Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs KY Shin, JW Shin, W Amir, S Chakraborty, JP Shim, ST Lee, H Jang, ... Materials 16 (18), 6138, 2023 | | 2023 |
Tae-Woo KimUniversity of UlsanVerified email at ulsan.ac.kr
