Qingkai QIAN
Qingkai QIAN
Electrical Engineering, The Pennsylvania State University
Verified email at psu.edu
Title
Cited by
Cited by
Year
The dependence of graphene Raman D-band on carrier density
J Liu, Q Li, Y Zou, Q Qian, Y Jin, G Li, K Jiang, S Fan
Nano letters 13 (12), 6170-6175, 2013
792013
Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation …
Z Zhang, Q Qian, B Li, KJ Chen
ACS applied materials & interfaces 10 (20), 17419-17426, 2018
572018
Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer
M Hua, J Wei, G Tang, Z Zhang, Q Qian, X Cai, N Wang, KJ Chen
IEEE Electron Device Letters 38 (7), 929-932, 2017
342017
Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
Q Qian, B Li, M Hua, Z Zhang, F Lan, Y Xu, R Yan, KJ Chen
Scientific reports 6, 27676-27676, 2016
282016
Trap-state-dominated suppression of electron conduction in carbon nanotube thin-film transistors
Q Qian, G Li, Y Jin, J Liu, Y Zou, K Jiang, S Fan, Q Li
ACS nano 8 (9), 9597-9605, 2014
262014
Enhanced performance of graphene transistor with ion-gel top gate
J Liu, Q Qian, Y Zou, G Li, Y Jin, K Jiang, S Fan, Q Li
Carbon 68, 480-486, 2014
232014
Fabrication of all‐carbon nanotube electronic devices on flexible substrates through CVD and transfer methods
Y Zou, Q Li, J Liu, Y Jin, Q Qian, K Jiang, S Fan
Advanced Materials 25 (42), 6050-6056, 2013
232013
Enhanced dielectric deposition on single-layer MoS2 with low damage using remote N2 plasma treatment
Q Qian, Z Zhang, M Hua, G Tang, J Lei, F Lan, Y Xu, R Yan, KJ Chen
Nanotechnology 28 (17), 175202, 2017
202017
650-V double-channel lateral Schottky barrier diode with dual-recess gated anode
J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen
IEEE Electron Device Letters 39 (2), 260-263, 2017
192017
An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss
J Lei, J Wei, G Tang, Q Qian, M Hua, Z Zhang, Z Zheng, KJ Chen
2017 IEEE International Electron Devices Meeting (IEDM), 25.2. 1-25.2. 4, 2017
112017
In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study
Q Qian, Z Zhang, KJ Chen
Langmuir : the ACS Journal of Surfaces and Colloids 34 (8), 2882–2889, 2018
92018
Revealing the nitridation effects on GaN surface by first-principles calculation and X-Ray/ultraviolet photoemission spectroscopy
Z Zhang, B Li, Q Qian, X Tang, M Hua, B Huang, KJ Chen
IEEE Transactions on Electron Devices 64 (10), 4036-4043, 2017
82017
Reverse-blocking normally-off GaN double-channel MOS-HEMT with low reverse leakage current and low on-state resistance
J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen
IEEE Electron Device Letters 39 (7), 1003-1006, 2018
52018
Layer-dependent second-order Raman intensity of MoS2 and WSe2: Influence of intervalley scattering
Q Qian, Z Zhang, KJ Chen
Phys. Rev. B 97 (16), 165409, 2018
52018
Nitridation of GaN surface for power device application: A first-principles study
Z Zhang, B Li, X Tang, Q Qian, M Hua, B Huang, KJ Chen
2016 IEEE International Electron Devices Meeting (IEDM), 36.2. 1-36.2. 4, 2016
52016
2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current
Q Qian, J Lei, J Wei, Z Zhang, G Tang, K Zhong, Z Zheng, KJ Chen
npj 2D Materials and Applications 3, 24, 2019
42019
Diameter distribution control of single-walled carbon nanotubes by etching ferritin nanoparticles
Y Zou, Q Li, J Liu, Y Jin, Y Liu, Q Qian, K Jiang, S Fan
Applied Physics Express 7 (5), 055102, 2014
42014
Ab initio study of impact of nitridation at amorphous-SiN x/GaN interface
Z Zhang, M Hua, J He, G Tang, Q Qian, KJ Chen
Applied Physics Express 11 (8), 081003, 2018
32018
Reverse-conducting normally-off double-channel AlGaN/GaN power transistor with interdigital built-in Schottky barrier diode
J Lei, J Wei, G Tang, Q Qian, Z Zhang, M Hua, Z Zheng, KJ Chen
IEEE Transactions on Electron Devices 66 (5), 2106-2112, 2019
22019
Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric
M Hua, Q Qian, J Wei, Z Zhang, G Tang, KJ Chen
physica status solidi (a) 215 (10), 1700641, 2018
22018
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