| All-Linear Multistate Magnetic Switching Induced by Electrical Current M Yang, Y Li, J Luo, Y Deng, N Zhang, X Zhang, S Li, Y Cui, P Yu, T Yang, ... Physical Review Applied 15 (5), 054013, 2021 | 10 | 2021 |
| The structural properties of LaRO3 (R= Cr, Mn, Fe): a first-principles calculation YR Li, ZT Hou, TX Wang, Y Li, HY Liu, XF Dai, GD Liu Journal of Physics: Conference Series 827 (1), 012015, 2017 | 10 | 2017 |
| Stability and electronic structure of defect complexes in Gd-doped GaN: First-principles calculations Y Li, ZT Hou, YR Li, HL Su, CC Liu, M Wang Journal of Applied Physics 122 (2), 2017 | 4 | 2017 |
| Current controlled non-hysteresis magnetic switching in the absence of magnetic field Y Li, M Yang, G Yu, B Cui, J Luo Applied Physics Letters 120 (6), 2022 | 3 | 2022 |
| Effect of Intrinsic defects on electronic and magnetic properties in Tm-doped GaN: first-principles calculations YR Li, HL Su, ZT Hou, HY Liu, CC Liu, Y Li Journal of Superconductivity and Novel Magnetism 31, 3911-3917, 2018 | 3 | 2018 |
| The effect of γ-ray irradiation on the SOT magnetic films and Hall devices T Yang, Y Cui, Y Li, M Yang, J Xu, H He, S Wang, J Zhang, J Luo Journal of Semiconductors 42 (2), 024102, 2021 | 2 | 2021 |
| Exchange interactions and magnetocaloric effects of the Heusler alloys Ni–Mn–In–R (R= Fe, Co) YR Li, HL Su, JB Sun, Y Li Modern Physics Letters B 32 (14), 1850146, 2018 | 2 | 2018 |
| Field-free magnetic switching dependence on lateral interfaces in synthetic antiferromagnets by ion implantation B Shen, M Yang, Y Li, P Yu, J Gao, B Cui, G Yu, J Luo Applied Physics Letters 124 (1), 2024 | 1 | 2024 |
| Charge-mediated voltage modulation of magnetism in Hf0. 5Zr0. 5O2/Co multiferroic heterojunction J Chen, P Yu, L Zhao, Y Li, M Yang, J Xu, J Gao, W Liu, J Li, W Wang, ... Chinese Physics B 32 (2), 027504, 2023 | 1 | 2023 |
| Temperature response of non-hysteresis magnetic switching by electrical current Y Li, M Yang, J Luo Journal of Materials Science: Materials in Electronics 33 (9), 6681-6688, 2022 | 1 | 2022 |
| Ga 空位对 GaN: Gd 体系磁性影响的第一性原理研究 侯振桃， 李彦如， 刘何燕， 代学芳， 刘国栋， 刘彩池， 李英 物理学报 65 (10), 107101, 2016 | 1 | 2016 |
| Manipulation of synthetic antiferromagnetic skyrmion by reduced voltage via design of double interface structure S Gong, M Yang, Y Li, B Shen, Y Li, P Yu, Y Cui, J Luo IEEE Electron Device Letters, 2024 | | 2024 |
| The effect of γ-ray irradiation on voltage-controlled magnetism of HfZrO/CoFeB Hall bar device W Cao, J Chen, P Yu, L Zhao, Y Li, M Yang, J Xu, J Gao, B Yang, L Yue, ... Journal of Magnetism and Magnetic Materials, 170695, 2023 | | 2023 |
| The Magnetocaloric Properties Around the Second-Order Magnetic Transition in YR Li, HL Su, HY Liu, HZ Luo, XF Dai, GD Liu, Y Li International Journal of Thermophysics 40, 1-10, 2019 | | 2019 |
| Magnetism induced by Ga vacancy in rare earth R (R= Gd, Eu, Tm) doped GaN ZT Hou, YR Li, TX Wang, Y Li, HY Liu, XF Dai, GD Liu Journal of Physics: Conference Series 827 (1), 012016, 2017 | | 2017 |
Meiyin YangInstitute of microelectronics, CASVerified email at ime.ac.cn
