Stefan Slesazeck
Stefan Slesazeck
NaMLab gGmbH
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Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ...
Advanced Functional Materials 26 (25), 4601-4612, 2016
Reconfigurable silicon nanowire transistors
A Heinzig, S Slesazeck, F Kreupl, T Mikolajick, WM Weber
Nano letters 12 (1), 119-124, 2012
A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ...
2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ...
2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016
Unveiling the double-well energy landscape in a ferroelectric layer
M Hoffmann, FPG Fengler, M Herzig, T Mittmann, B Max, U Schroeder, ...
Nature 565 (7740), 464-467, 2019
Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors
H Mulaosmanovic, J Ocker, S Müller, U Schroeder, J Müller, ...
ACS applied materials & interfaces 9 (4), 3792-3798, 2017
Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG
J Müller, E Yurchuk, T Schlösser, J Paul, R Hoffmann, S Müller, D Martin, ...
2012 Symposium on VLSI Technology (VLSIT), 25-26, 2012
Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2
M Hoffmann, M Pešić, K Chatterjee, AI Khan, S Salahuddin, S Slesazeck, ...
Advanced Functional Materials 26 (47), 8643-8649, 2016
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
T Mikolajick, S Slesazeck, MH Park, U Schroeder
Mrs Bulletin 43 (5), 340-346, 2018
Novel ferroelectric FET based synapse for neuromorphic systems
H Mulaosmanovic, J Ocker, S Müller, M Noack, J Müller, P Polakowski, ...
2017 Symposium on VLSI Technology, T176-T177, 2017
The past, the present, and the future of ferroelectric memories
T Mikolajick, U Schroeder, S Slesazeck
IEEE Transactions on Electron Devices 67 (4), 1434-1443, 2020
Nanoscale resistive switching memory devices: a review
S Slesazeck, T Mikolajick
Nanotechnology 30 (35), 352003, 2019
Mimicking biological neurons with a nanoscale ferroelectric transistor
H Mulaosmanovic, E Chicca, M Bertele, T Mikolajick, S Slesazeck
Nanoscale 10 (46), 21755-21763, 2018
Nonlinear dynamics of a locally-active memristor
A Ascoli, S Slesazeck, H Mähne, R Tetzlaff, T Mikolajick
IEEE Transactions on Circuits and Systems I: Regular Papers 62 (4), 1165-1174, 2015
Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors
E Yurchuk, J Müller, J Paul, T Schlösser, D Martin, R Hoffmann, S Müeller, ...
IEEE Transactions on Electron Devices 61 (11), 3699-3706, 2014
Physical model of threshold switching in NbO 2 based memristors
S Slesazeck, H Mähne, H Wylezich, A Wachowiak, J Radhakrishnan, ...
RSC advances 5 (124), 102318-102322, 2015
Next generation ferroelectric materials for semiconductor process integration and their applications
T Mikolajick, S Slesazeck, H Mulaosmanovic, MH Park, S Fichtner, ...
Journal of Applied Physics 129 (10), 100901, 2021
2022 roadmap on neuromorphic computing and engineering
DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ...
Neuromorphic Computing and Engineering 2 (2), 022501, 2022
Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
H Mulaosmanovic, S Slesazeck, J Ocker, M Pesic, S Muller, S Flachowsky, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.8. 1-26.8. 3, 2015
Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance
H Mulaosmanovic, ET Breyer, T Mikolajick, S Slesazeck
IEEE Transactions on Electron Devices 66 (9), 3828-3833, 2019
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