| Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si (0 0 1) for microelectronics and optoelectronics purposes JM Hartmann, JF Damlencourt, Y Bogumilowicz, P Holliger, G Rolland, ... Journal of Crystal Growth 274 (1-2), 90-99, 2005 | 166 | 2005 |
| Engineering strained silicon on insulator wafers with the Smart CutTM technology B Ghyselen, JM Hartmann, T Ernst, C Aulnette, B Osternaud, ... Solid-state electronics 48 (8), 1285-1296, 2004 | 157 | 2004 |
| Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si (001) substrate by metalorganic chemical vapour deposition with high mobility R Alcotte, M Martin, J Moeyaert, R Cipro, S David, F Bassani, F Ducroquet, ... Apl Materials 4 (4), 2016 | 139 | 2016 |
| Chemical vapour etching of Si, SiGe and Ge with HCl; applications to the formation of thin relaxed SiGe buffers and to the revelation of threading dislocations Y Bogumilowicz, JM Hartmann, R Truche, Y Campidelli, G Rolland, ... Semiconductor science and technology 20 (2), 127, 2004 | 132 | 2004 |
| High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications L Virot, L Vivien, JM Fédéli, Y Bogumilowicz, JM Hartmann, F Bœuf, ... Photonics Research 1 (3), 140-147, 2013 | 76 | 2013 |
| High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications L Virot, L Vivien, JM Fédéli, Y Bogumilowicz, JM Hartmann, F Bœuf, ... Photonics Research 1 (3), 140-147, 2013 | 76 | 2013 |
| Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices JM Hartmann, Y Bogumilowicz, P Holliger, F Laugier, R Truche, ... Semiconductor science and technology 19 (3), 311, 2003 | 63 | 2003 |
| Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si (100) 300 mm wafers for next generation non planar devices R Cipro, T Baron, M Martin, J Moeyaert, S David, V Gorbenko, F Bassani, ... Applied Physics Letters 104 (26), 2014 | 62 | 2014 |
| Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si (001) M Martin, D Caliste, R Cipro, R Alcotte, J Moeyaert, S David, F Bassani, ... Applied Physics Letters 109 (25), 2016 | 57 | 2016 |
| Strained Si and Ge MOSFETs with high-k/metal gate stack for high mobility dual channel CMOS O Weber, Y Bogumilowicz, T Ernst, JM Hartmann, F Ducroquet, F Andrieu, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 56 | 2005 |
| High germanium content SiGe virtual substrates grown at high temperatures Y Bogumilowicz, JM Hartmann, F Laugier, G Rolland, T Billon, ... Journal of crystal growth 283 (3-4), 346-355, 2005 | 53 | 2005 |
| High-temperature growth of very high germanium content SiGe virtual substrates Y Bogumilowicz, JM Hartmann, C Di Nardo, P Holliger, AM Papon, ... Journal of crystal growth 290 (2), 523-531, 2006 | 49 | 2006 |
| Co-integrated dual strained channels on fully depleted sSDOI CMOSFETs with HfO/sub 2//TiN gate stack down to 15nm gate length F Andrieu, T Ernst, O Faynot, Y Bogumilowicz, JM Hartmann, J Eymery, ... 2005 IEEE International SOI Conference Proceedings, 223-225, 2005 | 36 | 2005 |
| Impact of Mobility Boosters (XsSOI, CESL, TiN gate) on the Performance of< 100> or< 110> oriented FDSOI cMOSFETs for the 32nm Node F Andrieu, O Faynot, F Rochette, JC Barbé, C Buj, Y Bogumilowicz, ... 2007 IEEE Symposium on VLSI Technology, 50-51, 2007 | 33 | 2007 |
| SiGe high-temperature growth kinetics in reduced pressure-chemical vapor deposition Y Bogumilowicz, JM Hartmann, G Rolland, T Billon Journal of crystal growth 274 (1-2), 28-37, 2005 | 32 | 2005 |
| Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates Y Bogumilowicz, JM Hartmann, R Cipro, R Alcotte, M Martin, F Bassani, ... Applied Physics Letters 107 (21), 2015 | 31 | 2015 |
| SOI-type bonded structures for advanced technology nodes J Widiez, JM Hartmann, F Mazen, S Sollier, C Veytizou, Y Bogumilowicz, ... ECS Transactions 64 (5), 35, 2014 | 31 | 2014 |
| Reduced pressure–chemical vapor deposition of high Ge content Si1− xGex and high C content Si1− yCy layers for advanced metal oxide semiconductor transistors JM Hartmann, Y Bogumilowicz, F Andrieu, P Holliger, G Rolland, T Billon Journal of crystal growth 277 (1-4), 114-123, 2005 | 31 | 2005 |
| Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates Y Bogumilowicz, JM Hartmann, N Rochat, A Salaun, M Martin, F Bassani, ... Journal of Crystal Growth 453, 180-187, 2016 | 30 | 2016 |
| Selective chemical vapour etching of Si1− xGex versus Si with gaseous HCl Y Bogumilowicz, JM Hartmann, JM Fabri, T Billon Semiconductor science and technology 21 (12), 1668, 2006 | 24 | 2006 |
