Michael Shur

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Remis GaskaUVTON, Inc.Verified email at uvton.com
Grigory SiminUniversity of South CarolinaVerified email at engr.sc.edu
Max ShatalovCVD Equipment CorporationVerified email at cvdequipment.com
Victor RyzhiiPrinciple Researcher, Institute of UHFSE, Visiting Professor, Tohoku UniversityVerified email at riec.tohoku.ac.jp
Taiichi OtsujiRIEC, Tohoku UniversityVerified email at riec.tohoku.ac.jp
WOJCIECH KNAPCENTERA LABORATORIES - Polish Academy of Sciences WARSAW POLAND & L2C CNRS Montpellier FRANCEVerified email at umontpellier.fr
Maxim RyzhiiS. Associate Professor, University of AizuVerified email at u-aizu.ac.jp
Nezih PalaElectrical & Computer Engineering, Florida International UniversityVerified email at fiu.edu
Kwyro LeeProfessor of Electrical Engineering, KAISTVerified email at kaist.ac.kr
Vladimir MitinSUNY Distinguished Professor, University at BuffaloVerified email at buffalo.edu
Alexander A. BalandinDistinguished Professor of Electrical Engineering, University of California - RiversideVerified email at ee.ucr.edu
Vyacheslav PopovKotelnikov Institute of Radio Engineering and Electronics (Saratov Branch)Verified email at soire.renet.ru
Qhalid FareedTexas InstrumentsVerified email at ti.com
M.I. DyakonovLaboratoire Charles Coulomb (L2C), Université Montpellier -CNRSVerified email at umontpellier.fr
Guanxiong LiuUniversity of California RiversideVerified email at ee.ucr.edu
Juras MickeviciusVilnius UniversityVerified email at ff.vu.lt
Frédéric TeppeDirector of research - CNRS - Laboratoire Charles CoulombVerified email at umontpellier.fr
Hadis MorkoçVirginia Commonwealth UniversityVerified email at vcu.edu
Mikhail GaevskiCVD Equipment CorporationVerified email at CVDEquipment.com
Irina KhmyrovaUniversity of AizuVerified email at u-aizu.ac.jp

Michael Shur

Patricia W. and C. Sheldon Roberts Professor, Rensselaer Polytechnic

Verified email at rpi.edu - Homepage

semiconductors


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Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe ME Levinshtein, SL Rumyantsev, MS Shur John Wiley & Sons, 2001	2140	2001
Altered cytokine export and apoptosis in mice deficient in interleukin-1β converting enzyme K Kuida, JA Lippke, G Ku, MW Harding, DJ Livingston, MSS Su, ... science 267 (5206), 2000-2003, 1995	1975	1995
Handbook series on semiconductor parameters M Levinshtein World Scientific, 1997	1928*	1997
Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current M Dyakonov, M Shur Physical review letters 71 (15), 2465, 1993	1387	1993
Physics of semiconductor devices M Shur, J Singh Physics Today 43 (10), 98, 1990	1221	1990
Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid M Dyakonov, M Shur IEEE transactions on electron devices 43 (3), 380-387, 1996	1189	1996
de la source Introduction to solid-state lighting A Zukauskas, M Shur, R Gaska distributeur J. Wiley, 2017	960	2017
GaAs devices and circuits MS Shur Springer Science & Business Media, 2013	933	2013
Threshold switching in chalcogenide-glass thin films D Adler, MS Shur, M Silver, SR Ovshinsky Disordered Materials: Science and Technology, 66-87, 1991	803	1991
Transient electron transport in wurtzite GaN, InN, and AlN BE Foutz, SK O’Leary, MS Shur, LF Eastman Journal of applied physics 85 (11), 7727-7734, 1999	700	1999
Sensitive skin V Lumelsky, MS Shur, S Wagner, M Ding World Scientific, 2000	663	2000
Solid-state lighting: toward superior illumination MS Shur, R Zukauskas Proceedings of the IEEE 93 (10), 1691-1703, 2005	608	2005
Physics of amorphous silicon based alloy field‐effect transistors M Shur, M Hack Journal of Applied Physics 55 (10), 3831-3842, 1984	580	1984
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond Proceedings of the IEEE 79 (5), 677-701, 1991	577	1991
An experimental study of contact effects in organic thin film transistors DJ Gundlach, L Zhou, JA Nichols, TN Jackson, PV Necliudov, MS Shur Journal of Applied Physics 100 (2), 024509, 2006	537	2006
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor M Asif Khan, JN Kuznia, DT Olson, WJ Schaff, JW Burm, MS Shur Applied Physics Letters 65 (9), 1121-1123, 1994	523	1994
Plasma wave electronics: novel terahertz devices using two dimensional electron fluid MI Dyakonov, MS Shur IEEE Transactions on Electron Devices 43 (10), 1640-1645, 1996	485	1996
Nonresonant detection of terahertz radiation in field effect transistors W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, ... Journal of Applied Physics 91 (11), 9346-9353, 2002	484	2002
AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ... Applied Physics Express 5 (8), 082101, 2012	472	2012
Monte Carlo calculation of velocity-field characteristics of wurtzite GaN UV Bhapkar, MS Shur Journal of Applied Physics 82 (4), 1649-1655, 1997	472	1997

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