Qilong Bao
Qilong Bao
Unknown affiliation
Verified email at ime.ac.cn
Title
Cited by
Cited by
Year
Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNxPassivation and High-Temperature Gate Recess
Y Shi, S Huang, Q Bao, X Wang, K Wei, H Jiang, J Li, C Zhao, S Li, ...
IEEE Transactions on Electron Devices 63 (2), 614-619, 2016
492016
High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure
S Huang, X Liu, X Wang, X Kang, J Zhang, Q Bao, K Wei, Y Zheng, ...
IEEE Electron Device Letters 37 (12), 1617-1620, 2016
272016
Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing
J Zhang, S Huang, Q Bao, X Wang, K Wei, Y Zheng, Y Li, C Zhao, X Liu, ...
Applied Physics Letters 107 (26), 262109, 2015
252015
Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs
Z Liu, S Huang, Q Bao, X Wang, K Wei, H Jiang, H Cui, J Li, C Zhao, X Liu, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2016
192016
Mechanism of TMAl pre-seeding in AlN epitaxy on Si (111) substrate
Q Bao, J Luo, C Zhao
Vacuum 101, 184-188, 2014
192014
Effect of hydrogen carrier gas on AlN and AlGaN growth in AMEC Prismo D-BlueŽ MOCVD platform
Q Bao, T Zhu, N Zhou, S Guo, J Luo, C Zhao
Journal of Crystal Growth 419, 52-56, 2015
162015
Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure
Q Bao, S Huang, X Wang, K Wei, Y Zheng, Y Li, C Yang, H Jiang, J Li, ...
Semiconductor Science and Technology 31 (6), 065014, 2016
142016
Dependence of Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET
M Hua, J Wei, Q Bao, Z Zhang, Z Zheng, KJ Chen
IEEE Electron Device Letters 39 (3), 413-416, 2018
112018
Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiNx/GaN MIS-FETs
M Hua, J Wei, Q Bao, J He, Z Zhang, Z Zheng, J Lei, KJ Chen
2017 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2017
102017
Hole-induced threshold voltage shift under reverse-bias stress in E-mode GaN MIS-FET
M Hua, J Wei, Q Bao, Z Zheng, Z Zhang, J He, KJ Chen
IEEE Transactions on Electron Devices 65 (9), 3831-3838, 2018
62018
High-performance fully-recessed enhancement-mode GaN MIS-FETs with crystalline oxide interlayer
M Hua, Z Zhang, Q Qian, J Wei, Q Bao, G Tang, KJ Chen
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
52017
Effect of alloying temperature on the capacitance–voltage and current–voltage characteristics of low‐pressure chemical vapor deposition SiNx/n‐GaN MIS structures
X Ma, Y Liu, X Wang, S Huang, Z Gao, Q Bao, X Liu
physica status solidi (a) 212 (12), 2928-2935, 2015
42015
Method for forming semiconductor device having high-density contacts
SB Kim, JI Hong, D Kim
US Patent 6,653,238, 2003
42003
Evolution of traps in TiN/O3-sourced Al2O3/GaN gate structures with thermal annealing temperature
X Liu, S Huang, Q Bao, X Wang, K Wei, Y Li, J Xiang, C Zhao, X Yang, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2018
2018
Device physics towards high performance GaN-based power electronics
S HUANG, S Yang, ZK TANG, MY HUA, XH WANG, K WEI, QL BAO, ...
SCIENTIA SINICA Physica, Mechanica & Astronomica 46 (10), 107307, 2016
2016
面向高性能 GaN 基功率電子的器件物理研究
S Huang, S Yang, ZK Tang, MY Hua, XH Wang, K Wei, QL Bao, XY Liu, ...
Scientia Sinica: Physica, Mechanica et Astronomica 46 (10), 2016
2016
Al Preseeding Mechanism Study of Growing AlN on Si(111) Substrates by MOCVD
Z Jiang, H Cong, X Xu, Q Bao, H Zhang, J Luo, C Zhao
Bandaoti Jishu(Semiconductor Technology) 38 (4), 292-296, 2013
2013
Crack-Free GaN MOCVD Growth on 100 mm Silicon Substrate
Q Bao, H Cong, X Xu, Z Jiang, H Zhang, J Luo, C Zhao
Bandaoti Jishu(Semiconductor Technology) 38 (2), 130-134, 2013
2013
100mm 直径硅衬底上 MOCVD 外延生长无裂纹 GaN
包琦龙, 丛宏林, 徐小明, 江忠永, 张昊翔, 罗军, 赵超
半导体技术 38 (2), 130-134, 2013
2013
Si 衬底上 MOCVD 生长 AlN 的预铺铝机理研究
江忠永, 丛宏林, 徐小明, 包琦龙, 张昊翔, 罗军, 赵超
半导体技术 38 (4), 292-296, 2013
2013
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