| System-level modeling of microprocessor reliability degradation due to BTI and HCI CC Chen, S Cha, T Liu, L Milor 2014 IEEE International Reliability Physics Symposium, CA. 8.1-CA. 8.9, 2014 | 31 | 2014 |
| SRAM stability analysis for different cache configurations due to bias temperature instability and hot carrier injection T Liu, CC Chen, J Wu, L Milor 2016 IEEE 34th International Conference on Computer Design (ICCD), 225-232, 2016 | 27 | 2016 |
| Comprehensive reliability-aware statistical timing analysis using a unified gate-delay model for microprocessors T Liu, CC Chen, L Milor IEEE Transactions on Emerging Topics in Computing 6 (2), 219-232, 2016 | 21 | 2016 |
| System-level variation-aware aging simulator using a unified novel gate-delay model for bias temperature instability, hot carrier injection, and gate oxide breakdown T Liu, CC Chen, S Cha, L Milor Microelectronics Reliability 55 (9-10), 1334-1340, 2015 | 21 | 2015 |
| System-level modeling of microprocessor reliability degradation due to bias temperature instability and hot carrier injection CC Chen, T Liu, L Milor IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (8 …, 2016 | 18 | 2016 |
| Extraction of threshold voltage degradation modeling due to negative bias temperature instability in circuits with I/O measurements S Cha, CC Chen, T Liu, LS Milor 2014 IEEE 32nd VLSI Test Symposium (VTS), 1-6, 2014 | 17 | 2014 |
| Comprehensive reliability and aging analysis on SRAMs within microprocessor systems T Liu, CC Chen, W Kim, L Milor Microelectronics Reliability 55 (9-10), 1290-1296, 2015 | 16 | 2015 |
| Accurate standard cell characterization and statistical timing analysis using multivariate adaptive regression splines T Liu, CC Chen, L Milor Sixteenth International Symposium on Quality Electronic Design, 272-279, 2015 | 14 | 2015 |
| A comprehensive time-dependent dielectric breakdown lifetime simulator for both traditional CMOS and FinFET technology K Yang, T Liu, R Zhang, L Milor IEEE Transactions on Very Large Scale Integration (VLSI) Systems 26 (11 …, 2018 | 10 | 2018 |
| Front-end of line and middle-of-line time-dependent dielectric breakdown reliability simulator for logic circuits K Yang, T Liu, R Zhang, DH Kim, L Milor Microelectronics Reliability 76, 81-86, 2017 | 10 | 2017 |
| Processor-level reliability simulator for time-dependent gate dielectric breakdown CC Chen, T Liu, S Cha, L Milor Microprocessors and Microsystems 39 (8), 950-960, 2015 | 9 | 2015 |
| A comparison study of time-dependent dielectric breakdown for analog and digital circuit's optimal accelerated test regions K Yang, T Liu, R Zhang, L Milor 2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS), 1-6, 2017 | 8 | 2017 |
| BM3D 视频去噪算法实现与评估 李政， 刘文江， 戎蒙恬， 刘太智 信息技术, 30-32, 2012 | 8 | 2012 |
| Modeling of the reliability degradation of a FinFET-based SRAM due to bias temperature instability, hot carrier injection, and gate oxide breakdown R Zhang, T Liu, K Yang, L Milor 2017 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2017 | 7 | 2017 |
| Estimation of remaining life using embedded SRAM for wearout parameter extraction W Kim, CC Chen, T Liu, S Cha, L Milor 2015 6th International Workshop on Advances in Sensors and Interfaces (IWASI …, 2015 | 7 | 2015 |
| Implementation and evaluation of BM3D video denoising algorithms Z Li, W Liu, M Rong, T Liu Information Technology 4, 30-32, 2012 | 7 | 2012 |
| Circuit-level reliability simulator for front-end-of-line and middle-of-line time-dependent dielectric breakdown in FinFET technology K Yang, T Liu, R Zhang, L Milor 2018 IEEE 36th VLSI Test Symposium (VTS), 1-6, 2018 | 6 | 2018 |
| Modeling for SRAM reliability degradation due to gate oxide breakdown with a compact current model R Zhang, T Liu, K Yang, L Milor 2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS), 1-5, 2017 | 6 | 2017 |
| A lifetime and power sensitive design optimization framework for a radio frequency circuit K Yang, T Liu, R Zhang, L Milor 2017 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2017 | 6 | 2017 |
| Analysis of time-dependent dielectric breakdown induced aging of SRAM cache with different configurations R Zhang, T Liu, K Yang, L Milor Microelectronics Reliability 76, 87-91, 2017 | 6 | 2017 |
Chang-Chih ChenOracle在 oracle.com 的电子邮件经过验证
Chang-Chih ChenOracle在 oracle.com 的电子邮件经过验证
Soonyoung ChaGeorgia Institute of Technology在 gatech.edu 的电子邮件经过验证