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Seungmo Noh
Seungmo Noh
Principal Engineer at Samsung Electronics
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Cited by
Year
Electronic device and method for fabricating the same
WJ Choi, KS Park, C Dong, B Lee, GC Kim, SM Noh, MS Lee, CS Park, ...
US Patent 10,490,741, 2019
682019
Electronic device and method for fabricating the same
WJ Choi, KS Park, C Dong, B Lee, GC Kim, SM Noh, MS Lee, CS Park, ...
US Patent 9,865,806, 2018
682018
Technology for reliable spin-torque MRAM products
JM Slaughter, K Nagel, R Whig, S Deshpande, S Aggarwal, M DeHerrera, ...
2016 IEEE International Electron Devices Meeting (IEDM), 21.5. 1-21.5. 4, 2016
412016
22-nm FD-SOI embedded MRAM with full solder reflow compatibility and enhanced magnetic immunity
K Lee, K Yamane, S Noh, VB Naik, H Yang, SH Jang, J Kwon, ...
2018 IEEE Symposium on VLSI Technology, 183-184, 2018
302018
Spin dynamics in ferromagnetic resonance for nano-sized magnetic dot arrays: metrology and insight into magnetization dynamics
SM Noh, D Monma, K Miyake, M Doi, T Kaneko, H Imamura, M Sahashi
IEEE transactions on magnetics 47 (10), 2387-2390, 2011
182011
Electronic device for improving characteristic of variable resistance element and method of fabricating the same
WJ Choi, KS Park, C Dong, B Lee, GC Kim, SM Noh
US Patent 9,502,639, 2016
132016
High energy barrier perpendicular magnetic tunnel junction element with reduced temperature sensitivity
K Yamane, S Noh, K Lee, VB Naik
US Patent 10,529,917, 2020
102020
Area and pulsewidth dependence of bipolar TDDB in MgO magnetic tunnel junction
JH Lim, N Raghavan, S Mei, VB Naik, JH Kwon, SM Noh, B Liu, EH Toh, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 6D. 6-1-6D. 6-6, 2018
102018
Study on High-Frequency 3–D Magnetization Precession Modes of Circular Magnetic Nano-Dots Using Coplanar Wave Guide Vector Network Analyzer Ferromagnetic Resonance
K Miyake, SM Noh, T Kaneko, H Imamura, M Sahashi
IEEE transactions on magnetics 48 (5), 1782-1788, 2012
92012
Asymmetric dielectric breakdown behavior in MgO based magnetic tunnel junctions
JH Lim, N Raghavan, S Mei, KH Lee, SM Noh, JH Kwon, E Quek, KL Pey
Microelectronic Engineering 178, 308-312, 2017
82017
Reliability of industrial grade embedded-STT-MRAM
Y Ji, H Goo, J Lim, TY Jeong, T Uemura, GR Kim, BI Seo, S Lee, G Park, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-3, 2020
62020
Integrated circuits with magnetic tunnel junctions and methods for producing the same
S Noh, K Yamane, K Lee
US Patent 10,032,980, 2018
62018
Damping constant influence on spin dynamics in field generating layer of STO for MAMR writing head
SM Noh, D Monma, KMM Doi, M Sahashi
Journal of Physics: Conference Series 266 (1), 012061, 2011
62011
Electronic device and method for fabricating the same
SM Noh
US Patent 9,871,189, 2018
52018
Electronic device and method for fabricating the same
SM Noh
US Patent 9,865,803, 2018
52018
Spin-torque MRAM product status and technology for 40nm, 28nm and 22nm nodes
JM Slaughter, K Nagel, R Whig, S Deshpande, S Aggarwal, M DeHerrera, ...
2017 IEEE International Magnetics Conference (INTERMAG), 1-1, 2017
42017
Electronic device and method for fabricating the same
GC Kim, KIM Yang-Kon, SM Noh, WJ Choi
US Patent 10,133,689, 2018
32018
Electronic device and method for fabricating the same
SM Noh, KIM Yang-Kon, KY Jung, B Lee
US Patent 10,516,099, 2019
22019
Perpendicular magnetic anisotropy for CoFeBZr/MgO
JP Kil, DI Suh, GY Bae, WJ Choi, GC Kim, SM Noh, W Park
IEEE Transactions on Magnetics 51 (11), 1-4, 2015
22015
Electronic device and method for fabricating the same
WJ Choi, KS Park, C Dong, B Lee, GC Kim, SM Noh, MS Lee, CS Park, ...
US Patent 10,777,742, 2020
12020
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