| Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO2−xInterfacial Layer to Metal/Ge Contact GS Kim, JK Kim, SH Kim, J Jo, C Shin, JH Park, KC Saraswat, HY Yu IEEE Electron Device Letters 35 (11), 1076-1078, 2014 | 41 | 2014 |
| Surface Passivation of Germanium Using SF6Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET GS Kim, SH Kim, JK Kim, C Shin, JH Park, KC Saraswat, BJ Cho, HY Yu IEEE Electron Device Letters 36 (8), 745-747, 2015 | 30 | 2015 |
| Analytical study of interfacial layer doping effect on contact resistivity in metal-interfacial layer-Ge structure JK Kim, GS Kim, C Shin, JH Park, KC Saraswat, HY Yu IEEE electron device letters 35 (7), 705-707, 2014 | 30 | 2014 |
| Improved Switching Characteristics of p-Type Tin Monoxide Field-Effect Transistors through Schottky Energy Barrier Engineering T Kim*, JK Kim*, B Yoo, H Xu, S Yim, SH Kim, HY Yu, JK Jeong Journal of Materials Chemistry C, 2019 | 23 | 2019 |
| The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type Ge FinFET performances JK Kim, GS Kim, H Nam, C Shin, JH Park, JK Kim, BJ Cho, KC Saraswat, ... IEEE Electron Device Letters 35 (12), 1185-1187, 2014 | 23 | 2014 |
| Random dopant fluctuation-induced threshold voltage variation-immune Ge FinFET with metal–interlayer–semiconductor source/drain C Shin, JK Kim, GS Kim, H Lee, C Shin, JK Kim, BJ Cho, HY Yu ieee transactions on electron devices 63 (11), 4167-4172, 2016 | 17 | 2016 |
| Fermi-level unpinning using a Ge-passivated metal–interlayer–semiconductor structure for non-alloyed ohmic contact of high-electron-mobility transistors SH Kim, GS Kim, JK Kim, JH Park, C Shin, C Choi, HY Yu IEEE Electron Device Letters 36 (9), 884-886, 2015 | 17 | 2015 |
| Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma Treatment SH Kim, GS Kim, SW Kim, JK Kim, C Choi, JH Park, R Choi, HY Yu IEEE Electron Device Letters 37 (4), 373-376, 2016 | 14 | 2016 |
| Origin of ambipolar behavior in p-type tin monoxide semiconductors: Impact of oxygen vacancy defects T Kim, MJ Kim, H Lee, H Xu, CH Choi, JK Kim, JK Jeong IEEE Transactions on Electron Devices 68 (9), 4467-4472, 2021 | 13 | 2021 |
| Analytical model of contact resistance in vertically stacked nanosheet FETs for sub-3-nm technology node SG Jung, JK Kim, HY Yu IEEE Transactions on Electron Devices 69 (3), 930-935, 2022 | 8 | 2022 |
| Near-field to far-field RCS prediction on arbitrary scanning surfaces based on spherical wave expansion W Kim, HR Im, YH Noh, IP Hong, HS Tae, JK Kim, JG Yook Sensors 20 (24), 7199, 2020 | 7 | 2020 |
| Universal Metal–Interlayer–Semiconductor Contact Modeling Considering Interface-State Effect on Contact Resistivity Degradation JK Kim, SH Kim, T Kim, HY Yu IEEE Transactions on Electron Devices 65 (11), 4982-4987, 2018 | 7 | 2018 |
| RCS feature extraction using discretized point scatterer with compressive sensing YH Noh, W Kim, HS Tae, JK Kim, IP Hong, JG Yook IEEE Antennas and Wireless Propagation Letters 20 (2), 165-168, 2020 | 5 | 2020 |
| High-Performance Hexagonal Tellurium Thin-Film Transistor Using Tellurium Oxide as a Crystallization Retarder T Kim, CH Choi, SE Kim, JK Kim, J Jang, SC Choi, J Noh, KS Park, J Kim, ... IEEE Electron Device Letters 44 (2), 269-272, 2022 | 4 | 2022 |
| High mobility p-channel tin monoxide thin-film transistors with hysteresis-free like behavior T Kim, H Lee, SE Kim, JK Kim, JK Jeong Applied Physics Letters 121 (14), 2022 | 4 | 2022 |
| Threshold voltage variation-immune FinFET design with metal-interlayer-semiconductor source/drain structure C Shin, JK Kim, C Shin, JK Kim, HY Yu Current Applied Physics 16 (6), 618-622, 2016 | 3 | 2016 |
| Effect of metal nitride on contact resistivity of metal-interlayer-Ge source/drain in sub-10-nm n-type Ge FinFET J Ahn, JK Kim, SW Kim, GS Kim, C Shin, JK Kim, BJ Cho, HY Yu IEEE Electron Device Letters 37 (6), 705-708, 2016 | 3 | 2016 |
| Impact of metal nitrides on contact resistivity of metal-interlayer-semiconductor source/drain in sub-14 nm n-type Si FinFET J Ahn, JK Kim, JK Kim, J Kim, JH Park, HY Yu Journal of Nanoscience and Nanotechnology 17 (5), 3084-3088, 2017 | 2 | 2017 |
| Cooling future system-on-chips with diamond inter-tiers M Malakoutian, A Kasperovich, D Rich, K Woo, C Perez, R Soman, ... Cell Reports Physical Science 4 (12), 2023 | 1 | 2023 |
| Three-Dimensional Near-Field to Far-Field Transformation for Radar Cross Section Estimation of Elongated Targets via Subdimensional Hybrid Conversion JK Kim, HS Tae, MG Seo, HM Park Journal of Electromagnetic Engineering and Science 22 (4), 509-514, 2022 | | 2022 |
Kim, Gwang-SikSamsung ElectronicsVerified email at korea.ac.kr
