| Demonstration of high efficiency cascaded blue and green micro-light-emitting diodes with independent junction control P Li, H Li, Y Yao, H Zhang, C Lynsky, KS Qwah, JS Speck, S Nakamura, ... Applied Physics Letters 118 (26), 2021 | 22 | 2021 |
| Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder KS Qwah, M Monavarian, G Lheureux, J Wang, YR Wu, JS Speck Applied Physics Letters 117 (2), 2020 | 18 | 2020 |
| Over 1 kV vertical GaN-on-GaN pn diodes with low on-resistance using ammonia molecular beam epitaxy E Farzana, J Wang, M Monavarian, T Itoh, KS Qwah, ZJ Biegler, ... IEEE Electron Device Letters 41 (12), 1806-1809, 2020 | 17 | 2020 |
| Improved Vertical Carrier Transport for Green III-Nitride LEDs Using Alloy Quantum Barriers C Lynsky, G Lheureux, B Bonef, KS Qwah, RC White, SP DenBaars, ... Physical Review Applied 17 (5), 054048, 2022 | 13 | 2022 |
| Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control P Li, H Li, Y Yao, H Zhang, C Lynsky, KS Qwah, M Iza, JS Speck, ... Optics Express 29 (14), 22001-22007, 2021 | 11 | 2021 |
| Modeling dislocation-related leakage currents in GaN pn diodes CA Robertson, KS Qwah, YR Wu, JS Speck Journal of Applied Physics 126 (24), 2019 | 10 | 2019 |
| Structural and optical properties of nonpolar m-and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions M Monavarian, J Xu, MN Fireman, N Nookala, F Wu, B Bonef, KS Qwah, ... Applied Physics Letters 116 (20), 2020 | 9 | 2020 |
| Impact of growth parameters on the background doping of GaN films grown by ammonia and plasma-assisted molecular beam epitaxy for high-voltage vertical power switches J Wang, KF Jorgensen, E Farzana, KS Qwah, M Monavarian, ZJ Biegler, ... APL Materials 9 (8), 2021 | 4 | 2021 |
| Modeling dislocation-related reverse bias leakage in GaN p-n diodes KS Qwah, CA Robertson, YR Wu, J Speck Semiconductor Science and Technology, 2021 | 4 | 2021 |
| Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrödinger equation TY Tsai, KS Qwah, JP Banon, M Filoche, C Weisbuch, YR Wu, JS Speck Physical Review Applied 20 (4), 044069, 2023 | 3 | 2023 |
| Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes P Li, H Li, Y Yao, KS Qwah, M Iza, JS Speck, S Nakamura, SP DenBaars Optics Express 31 (5), 7572-7578, 2023 | 3 | 2023 |
| Vertical hole transport through unipolar InGaN quantum wells and double heterostructures KS Qwah, M Monavarian, WY Ho, YR Wu, JS Speck Physical Review Materials 6 (4), 044602, 2022 | 2 | 2022 |
| Atomic layer etching (ALE) of III-nitrides WY Ho, YC Chow, Z Biegler, KS Qwah, T Tak, A Wissel-Garcia, I Liu, F Wu, ... Applied Physics Letters 123 (6), 2023 | 1 | 2023 |
| Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy KS Qwah, E Farzana, A Wissel, M Monavarian, T Mates, JS Speck APL Materials 10 (8), 2022 | 1 | 2022 |
| Intersubband Transitions in GaN/Al0.5Ga0.5N Quantum Wells on a-Plane and m-Plane GaN Substrates J Xu, M Monavarian, N Nookala, MN Fireman, KS Qwah, JS Speck, ... 2020 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2020 | 1 | 2020 |
| (Invited) Gallium Nitride for Vertical Power Devices: Improving Morphology and Unintentional Impurities for Better Devices JS Speck, E Farzana, KS Qwah, ZJ Biegler, A Wissel-Garcia, ... Electrochemical Society Meeting Abstracts 244, 1687-1687, 2023 | | 2023 |
| (Invited) Vertical GaN Diodes: Effect of Growth Parameters, Indium Surfactants, and Device Development for High-Power Electronics JS Speck, E Farzana, KS Qwah Electrochemical Society Meeting Abstracts 242, 1363-1363, 2022 | | 2022 |
| Theoretical and Experimental Studies of III-Nitride Devices KSC Qwah University of California, Santa Barbara, 2022 | | 2022 |
| (Invited) Vertical GaN Devices for High-Power Electronics E Farzana, J Wang, KF Jorgensen, KS Qwah, M Monavarian, T Itoh, ... Electrochemical Society Meeting Abstracts 240, 1004-1004, 2021 | | 2021 |
| Supplementary Material Theoretical and experimental investigation of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder KS Qwah, M Monavarian, G Lheureux, J Wang, YR Wu, JS Speck | | |
Jim SpeckProfessor of Materials, UCSBVerified email at ucsb.edu
