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Marek Godlewski
Marek Godlewski
Instytut Fizyki PAN
在 ifpan.edu.pl 的电子邮件经过验证
标题
引用次数
引用次数
年份
Extremely low temperature growth of ZnO by atomic layer deposition
E Guziewicz, IA Kowalik, M Godlewski, K Kopalko, V Osinniy, A Wójcik, ...
Journal of Applied Physics 103 (3), 033515, 2008
2812008
Giant electric fields in unstrained GaN single quantum wells
R By:Langer, R (Langer, J Simon, J (Simon, V Ortiz, V (Ortiz, ...
Applied Physics Letters 74 (25), 3827-3829, 1999
2601999
Optical Characterization of Eu-Doped and Undoped Gd2O3 Nanoparticles Synthesized by the Hydrogen Flame Pyrolysis Method
EM Goldys, K Drozdowicz-Tomsia, S Jinjun, D Dosev, IM Kennedy, ...
Journal of the American Chemical Society 128 (45), 14498-14505, 2006
2132006
ALD grown zinc oxide with controllable electrical properties
E Guziewicz, M Godlewski, L Wachnicki, TA Krajewski, G Luka, ...
Semiconductor Science and Technology 27 (7), 074011, 2012
1792012
Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition
N Huby, S Ferrari, E Guziewicz, M Godlewski, V Osinniy
Applied Physics Letters 92 (2), 023502, 2008
1532008
The chromium impurity photogeneration transitions in ZnS, ZnSe and ZnTe
M Godlewski, M Kaminska
Journal of Physics C: Solid State Physics 13 (35), 6537, 1980
1471980
ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions
E Guziewicz, M Godlewski, T Krajewski, Ł Wachnicki, A Szczepanik, ...
Journal of Applied Physics 105 (12), 122413, 2009
1262009
Aluminum-doped zinc oxide films grown by atomic layer deposition for transparent electrode applications
G Luka, TA Krajewski, BS Witkowski, G Wisz, IS Virt, E Guziewicz, ...
Journal of Materials Science: Materials in Electronics 22 (12), 1810-1815, 2011
1252011
New efficient solar cell structures based on zinc oxide nanorods
R Pietruszka, BS Witkowski, S Gieraltowska, P Caban, L Wachnicki, ...
Solar Energy Materials and Solar Cells 143, 99-104, 2015
1192015
ZnO layers grown by Atomic Layer Deposition: a new material for transparent conductive oxide
M Godlewski, E Guziewicz, G Łuka, T Krajewski, M Łukasiewicz, ...
Thin Solid Films 518 (4), 1145-1148, 2009
1172009
Controlling of preferential growth mode of ZnO thin films grown by atomic layer deposition
A Wójcik, M Godlewski, E Guziewicz, R Minikayev, W Paszkowicz
Journal of Crystal Growth 310 (2), 284-289, 2008
992008
Fluorescence upconversion in Sm-doped
D Dosev, IM Kennedy, M Godlewski, I Gryczynski, K Tomsia, EM Goldys
Applied physics letters 88 (1), 011906, 2006
972006
Zinc oxide for electronic, photovoltaic and optoelectronic applications
M Godlewski, E Guziewicz, K Kopalko, G Łuka, MI Łukasiewicz, ...
Low Temperature Physics 37 (3), 235-240, 2011
902011
Poly(3-hexylthiophene)/ZnO hybrid junctions for microelectronics applications
E Katsia, N Huby, G Tallarida, B Kutrzeba-Kotowska, M Perego, S Ferrari, ...
Applied Physics Letters 94 (14), 143501, 2009
862009
On the application of the photoEPR technique to the studies of photoionization, DAP recombination, and nonradiative recombination processes
M Godlewski
physica status solidi (a) 90 (1), 11-52, 1985
831985
Excitation and recombination processes during electroluminescence of rare earth-activated materials
M Godlewski, M Leskelä
Critical Reviews in Solid State and Material Sciences 19 (4), 199-239, 1994
821994
Optical detection of cyclotron resonance for characterization of recombination processes in semiconductors
M Godlewski, WM Chen, B Monemar
Critical Reviews in Solid State and Material Sciences 19 (4), 241-301, 1994
811994
Label-free sensitivity of long-period gratings enhanced by atomic layer deposited TiO2 nano-overlays
M Smietana, M Koba, E Brzozowska, K Krogulski, J Nakonieczny, ...
Optics express 23 (7), 8441-8453, 2015
732015
Transparent and conductive undoped zinc oxide thin films grown by atomic layer deposition
G Luka, T Krajewski, L Wachnicki, B Witkowski, E Lusakowska, ...
physica status solidi (a) 207 (7), 1568-1571, 2010
732010
ODMR investigations of recombination processes in ZnSe: Cu
M Godlewski, WE Lamb, BC Cavenett
Solid State Communications 39 (4), 595-599, 1981
721981
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