| Various threshold switching devices for integrate and fire neuron applications D Lee, M Kwak, K Moon, W Choi, J Park, J Yoo, J Song, S Lim, C Sung, ... Advanced Electronic Materials 5 (9), 1800866, 2019 | 122 | 2019 |
| Ionic Sieving Through One‐Atom‐Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing RD Nikam, J Lee, W Choi, W Banerjee, M Kwak, M Yadav, H Hwang Small 17 (44), 2103543, 2021 | 42 | 2021 |
| Pr0.7Ca0.3MnO3-Based Three-Terminal Synapse for Neuromorphic Computing C Lee, KG Rajput, W Choi, M Kwak, RD Nikam, S Kim, H Hwang IEEE Electron Device Letters 41 (10), 1500-1503, 2020 | 23 | 2020 |
| Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor C Lee, W Choi, M Kwak, S Kim, H Hwang Applied Physics Letters 119 (10), 2021 | 19 | 2021 |
| WOx-Based Synapse Device With Excellent Conductance Uniformity for Hardware Neural Networks W Choi, SG Gi, D Lee, S Lim, C Lee, BG Lee, H Hwang IEEE Transactions on Nanotechnology 19, 594-600, 2020 | 17 | 2020 |
| Improved synaptic functionalities of Li-based nano-ionic synaptic transistor with ultralow conductance enabled by Al2O3 barrier layer K Lee, M Kwak, W Choi, C Lee, J Lee, S Noh, J Lee, H Lee, H Hwang Nanotechnology 32 (27), 275201, 2021 | 16 | 2021 |
| Hardware implementation of neural network using pre-programmed resistive device for pattern recognition W Choi, K Moon, M Kwak, C Sung, J Lee, J Song, J Park, SA Chekol, ... Solid-State Electronics 153, 79-83, 2019 | 13 | 2019 |
| Excellent Synapse Characteristics of 50 nm Vertical Transistor with WOx channel for High Density Neuromorphic system C Lee, W Choi, M Kwak, S Kim, H Hwang 2021 Symposium on VLSI Technology, 1-2, 2021 | 12 | 2021 |
| Enhanced switching characteristics of an ovonic threshold switching device with an ultra-thin MgO interfacial layer J Lee, S Lee, M Kwak, W Choi, O Mosendz, H Hwang IEEE Electron Device Letters 43 (2), 220-223, 2021 | 11 | 2021 |
| Excellent pattern recognition accuracy of neural networks using hybrid synapses and complementary training M Kwak, W Choi, S Heo, C Lee, R Nikam, S Kim, H Hwang IEEE Electron Device Letters 42 (4), 609-612, 2021 | 9 | 2021 |
| Hardware Neural Network using Hybrid Synapses via Transfer Learning: WOx Nano-Resistors and TiOx RRAM Synapse for Energy-Efficient Edge-AI Sensor W Choi, M Kwak, S Heo, K Lee, S Lee, H Hwang 2021 IEEE International Electron Devices Meeting (IEDM), 23.1. 1-23.1. 4, 2021 | 8 | 2021 |
| Impact of operating temperature on pattern recognition accuracy of resistive array-based hardware neural networks W Choi, C Lee, S Noh, J Lee, H Lee, S Kim, H Hwang IEEE Electron Device Letters 42 (5), 763-766, 2021 | 8 | 2021 |
| On-chip integrated atomically thin 2D material heater as a training accelerator for an electrochemical random-access memory synapse for neuromorphic computing application RD Nikam, J Lee, W Choi, D Kim, H Hwang ACS nano 16 (8), 12214-12225, 2022 | 6 | 2022 |
| Improved On-chip Training Efficiency at Elevated Temperature and Excellent Inference Accuracy with Retention (> 108 s) of ECRAM Synapse … C Lee, M Kwak, W k Choi, S Kim, H Hwang 2021 IEEE International Electron Devices Meeting (IEDM), 12.3. 1-12.3. 4, 2021 | 6 | 2021 |
| Neural network training acceleration with RRAM-based hybrid synapses W Choi, M Kwak, S Kim, H Hwang Frontiers in Neuroscience 15, 690418, 2021 | 3 | 2021 |
| OTS-based analog-to-stochastic converter for fully-parallel weight update in cross-point array neural networks M Kwak, S Lee, W Choi, C Lee, S Kim, H Hwang 2021 Symposium on VLSI Technology, 1-2, 2021 | 3 | 2021 |
| NbO2 selector device with Ge2Sb2Te5 thermal barrier for low off current (300 nA) and low power operation O Kwon, J Lee, K Lee, W Choi, H Hwang Applied Physics Letters 122 (11), 2023 | 2 | 2023 |
| Exploiting Read Current Noise of TiOx Resistive Memory by Controlling Forming Conditions for Probabilistic Neural Network Hardware W Choi, W Ji, S Heo, D Lee, K Noh, C Lee, J Woo, S Kim, H Hwang IEEE Electron Device Letters 43 (9), 1571-1574, 2022 | 2 | 2022 |
| Enhanced ON/OFF Ratio (4× 105) and Robust Endurance (> 1010) in an InGaZnO/HfxZr1-xO2 Ferroelectric Diode via Defect Engineering L Jung, S Oh, H Jang, K Lee, W Choi, H Hwang IEEE Transactions on Electron Devices 71 (3), 2238-2242, 2024 | 1 | 2024 |
| Inherent Stochasticity of Ovonic Threshold Switch for Neuronal Dropout of Edge-AI Hardware D Kim, W Choi, J Lee, H Hwang IEEE Electron Device Letters, 2023 | 1 | 2023 |
Hyunsang HwangPOSTECH, KoreaVerified email at postech.ac.kr
