| Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder D Querlioz, Y Apertet, A Valentin, K Huet, A Bournel, S Galdin-Retailleau, ... Applied Physics Letters 92 (4), 2008 | 142 | 2008 |
| On the ballistic transport in nanometer-scaled DG MOSFETs J Saint Martin, A Bournel, P Dollfus IEEE Transactions on Electron Devices 51 (7), 1148-1155, 2004 | 132 | 2004 |
| Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node M Raine, G Hubert, M Gaillardin, L Artola, P Paillet, S Girard, ... IEEE Transactions on Nuclear Science 58 (3), 840-847, 2011 | 106 | 2011 |
| On the ability of the particle Monte Carlo technique to include quantum effects in nano-MOSFET simulation D Querlioz, J Saint-Martin, K Huet, A Bournel, V Aubry-Fortuna, C Chassat, ... IEEE Transactions on Electron Devices 54 (9), 2232-2242, 2007 | 99 | 2007 |
| Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures VN Do, VH Nguyen, P Dollfus, A Bournel Journal of Applied Physics 104 (6), 063708-063708-7, 2008 | 90 | 2008 |
| Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation P Dollfus, A Bournel, S Galdin, S Barraud, P Hesto IEEE Transactions on Electron Devices 51 (5), 749-756, 2004 | 85 | 2004 |
| Gate-induced spin precession in an In0. 53Ga0. 47As two dimensional electron gas A Bournel, P Dollfus, P Bruno, P Hesto European Physical Journal-Applied Physics 4 (1), 1-4, 1998 | 85 | 1998 |
| Resonant tunnelling diodes based on graphene/h-BN heterostructure VH Nguyen, F Mazzamuto, A Bournel, P Dollfus Journal of Physics D: Applied Physics 45 (32), 325104, 2012 | 84 | 2012 |
| Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas J Saint-Martin, A Bournel, F Monsef, C Chassat, P Dollfus Semiconductor science and technology 21 (4), L29, 2006 | 76 | 2006 |
| Intrinsic spin Hall conductivity of the semimetals and J Zhou, J Qiao, A Bournel, W Zhao Physical Review B 99 (6), 060408, 2019 | 75 | 2019 |
| Large Tunneling Magnetoresistance in VSe2/MoS2 Magnetic Tunnel Junction J Zhou, J Qiao, CG Duan, A Bournel, KL Wang, W Zhao ACS applied materials & interfaces 11 (19), 17647-17653, 2019 | 73 | 2019 |
| Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation J Saint-Martin, A Bournel, P Dollfus Solid-State Electronics 50 (1), 94-101, 2006 | 68 | 2006 |
| Controllable spin-dependent transport in armchair graphene nanoribbon structures VH Nguyen, VN Do, A Bournel, VL Nguyen, P Dollfus Journal of Applied Physics 106 (5), 053710-053710-7, 2009 | 67 | 2009 |
| A study of quantum transport in end-of-roadmap DG-MOSFETs using a fully self-consistent Wigner Monte Carlo approach D Querlioz, J Saint-Martin, VN Do, A Bournel, P Dollfus IEEE Transactions on Nanotechnology 5 (6), 737-744, 2006 | 64 | 2006 |
| Current-limiting challenges for all-spin logic devices L Su, Y Zhang, JO Klein, Y Zhang, A Bournel, A Fert, W Zhao Scientific Reports 5, 14905, 2015 | 60 | 2015 |
| Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect VH Nguyen, F Mazzamuto, J Saint-Martin, A Bournel, P Dollfus Nanotechnology 23 (6), 065201, 2012 | 56 | 2012 |
| An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTDs D Querlioz, P Dollfus, VN Do, A Bournel, VL Nguyen Journal of Computational Electronics 5, 443-446, 2006 | 55 | 2006 |
| Wigner Monte Carlo simulation of phonon-induced electron decoherence in semiconductor nanodevices D Querlioz, J Saint-Martin, A Bournel, P Dollfus Physical Review B 78 (16), 165306, 2008 | 53 | 2008 |
| Graphene nanomesh transistor with high on/off ratio and good saturation behavior S Berrada, V Hung Nguyen, D Querlioz, J Saint-Martin, A Alarcón, ... Applied Physics Letters 103 (18), 2013 | 52 | 2013 |
| Effect of the ion mass and energy on the response of 70-nm SOI transistors to the ion deposited charge by direct ionization M Raine, M Gaillardin, J Sauvestre, O Flament, A Bournel, ... IEEE Transactions on Nuclear Science 57 (4), 1892-1899, 2010 | 48 | 2010 |
Philippe DollfusCNRS, Université Paris-Saclay在 universite-paris-saclay.fr 的电子邮件经过验证
