| Semiconducting black phosphorus: synthesis, transport properties and electronic applications H Liu, Y Du, Y Deng, DY Peide Chemical Society Reviews 44 (9), 2732-2743, 2015 | 1532 | 2015 |
| Chloride molecular doping technique on 2D materials: WS2 and MoS2 L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ... Nano Letters 14 (11), 6275-6280, 2014 | 789 | 2014 |
| Field-effect transistors made from solution-grown two-dimensional tellurene Y Wang, G Qiu, R Wang, S Huang, Q Wang, Y Liu, Y Du, WA Goddard III, ... Nature Electronics 1 (4), 228-236, 2018 | 766 | 2018 |
| Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus Z Luo, J Maassen, Y Deng, Y Du, RP Garrelts, MS Lundstrom, PD Ye, ... Nature Communications 6, 8572, 2015 | 719 | 2015 |
| Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar and scaling Y Du, H Liu, Y Deng, PD Ye ACS Nano 8 (10), 10035-10042, 2014 | 499 | 2014 |
| Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films H Liu, M Si, S Najmaei, AT Neal, Y Du, PM Ajayan, J Lou, PD Ye Nano Letters 13 (6), 2640-2646, 2013 | 399* | 2013 |
| One-dimensional van der Waals material tellurium: Raman spectroscopy under strain and magneto-transport Y Du, G Qiu, Y Wang, M Si, X Xu, W Wu, PD Ye Nano letters 17 (6), 3965-3973, 2017 | 338 | 2017 |
| Molecular Doping of Multilayer MoS₂ Field-Effect Transistors: Reduction in Sheet and Contact Resistances Y Du, H Liu, AT Neal, M Si, PD Ye IEEE Electron Device Letters 34 (10), 1328 - 1330, 2013 | 302 | 2013 |
| Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers H Liu, M Si, Y Deng, AT Neal, Y Du, S Najmaei, PM Ajayan, J Lou, PD Ye ACS Nano 8 (1), 1031-1038, 2013 | 288 | 2013 |
| Auxetic Black Phosphorus: A 2D Material with Negative Poisson's Ratio Y Du, J Maassen, W Wu, Z Luo, X Xu, PD Ye Nano Letters 16 (10), 6701-6708, 2016 | 223 | 2016 |
| The effect of dielectric capping on few-layer phosphorene transistors: Tuning the Schottky barrier heights H Liu, AT Neal, M Si, Y Du, DY Peide IEEE Electron Device Letters 35 (7), 795-797, 2014 | 201 | 2014 |
| MoS₂ Field-Effect Transistors With Graphene/Metal Heterocontacts Y Du, L Yang, J Zhang, H Liu, K Majumdar, PD Kirsch, PD Ye IEEE Electron Device Letters 35 (5), 599-601, 2014 | 176 | 2014 |
| Surface chemistry of black phosphorus under a controlled oxidative environment W Luo, DY Zemlyanov, CA Milligan, Y Du, L Yang, Y Wu, DY Peide Nanotechnology 27 (43), 434002, 2016 | 166 | 2016 |
| Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor M Si, C Jiang, W Chung, Y Du, MA Alam, PD Ye Nano letters 18 (6), 3682-3687, 2018 | 123 | 2018 |
| Observation of Optical and Electrical In-Plane Anisotropy in High-Mobility Few-Layer ZrTe5 G Qiu, Y Du, A Charnas, H Zhou, S Jin, Z Luo, D Zemlyanov, X Xu, ... Nano Letters 16 (12), 7364-7369, 2016 | 98 | 2016 |
| Temporal and Thermal Stability of Al2O3-Passivated Phosphorene MOSFETs X Luo, Y Rahbarihagh, JCM Hwang, H Liu, Y Du, DY Peide IEEE Electron Device Letters 35 (12), 1314-1316, 2014 | 93 | 2014 |
| High-performance MoS2field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm) L Yang, K Majumdar, Y Du, H Liu, H Wu, M Hatzistergos, PY Hung, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 86 | 2014 |
| Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping Y Du, L Yang, H Zhou, P Ye IEEE Electron Device Letters 37 (4), 429 - 432, 2016 | 71 | 2016 |
| Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors Y Du, L Yang, H Liu, PD Ye APL Materials 2 (9), 2014 | 65 | 2014 |
| Two-dimensional TaSe2 metallic crystals: Spin-orbit scattering length and breakdown current density AT Neal, Y Du, H Liu, PD Ye ACS Nano 8 (9), 9137-9142, 2014 | 60 | 2014 |
