Quoc Toan Le
Quoc Toan Le
imec, Leuven, Belgium
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Interfacial chemistry of and LiF with reactive metals
MG Mason, CW Tang, LS Hung, P Raychaudhuri, J Madathil, DJ Giesen, ...
Journal of Applied Physics 89 (5), 2756-2765, 2001
A photoelectron spectroscopy study on the indium tin oxide treatment by acids and bases
F Nüesch, LJ Rothberg, EW Forsythe, QT Le, Y Gao
Applied Physics Letters 74 (6), 880-882, 1999
Photoemission study of aluminum/tris-(8-hydroxyquinoline) aluminum and aluminum/LiF/tris-(8-hydroxyquinoline) aluminum interfaces
QT Le, L Yan, Y Gao, MG Mason, DJ Giesen, CW Tang
Journal of Applied Physics 87 (1), 375-379, 2000
Importance of indium tin oxide surface acido basicity for charge injection into organic materials based light emitting diodes
F Nüesch, EW Forsythe, QT Le, Y Gao, LJ Rothberg
Journal of Applied Physics 87 (11), 7973-7980, 2000
Photoemission study of the interface between phenyl diamine and treated indium–tin–oxide
QT Le, F Nüesch, LJ Rothberg, EW Forsythe, Y Gao
Applied physics letters 75 (10), 1357-1359, 1999
Analysis of titanium dental implants after failure of osseointegration: Combined histological, electron microscopy, and X‐ray photoelectron spectroscopy approach
A Arys, C Philippart, N Dourov, Y He, QT Le, JJ Pireaux
Journal of biomedical materials research 43 (3), 300-312, 1998
The removal of copper oxides by ethyl alcohol monitored in situ by spectroscopic ellipsometry
A Satta, D Shamiryan, MR Baklanov, CM Whelan, QT Le, GP Beyer, ...
Journal of The Electrochemical Society 150 (5), G300, 2003
Interface formation between NPB and processed indium tin oxide
QT Le, EW Forsythe, F Nüesch, LJ Rothberg, L Yan, Y Gao
Thin Solid Films 363 (1-2), 42-46, 2000
Quantification of processing damage in porous low dielectric constant films
MR Baklanov, KP Mogilnikov, QT Le
Microelectronic Engineering 83 (11-12), 2287-2291, 2006
Factors affecting an efficient sealing of porous low-k dielectrics by physical vapor deposition Ta(N) thin films
F Iacopi, Z Tőkei, QT Le, D Shamiryan, T Conard, B Brijs, U Kreissig, ...
Journal of applied physics 92 (3), 1548-1554, 2002
Removal of plasma-modified low-k layer using dilute HF: Influence of concentration
QT Le, MR Baklanov, E Kesters, A Azioune, H Struyf, W Boullart, ...
Electrochemical and Solid-State Letters 8 (7), F21, 2005
Surface modification of PET films with RF plasma and adhesion of in situ evaporated Al on PET
QT Le, JJ Pireaux, JJ Verbist
Surface and interface analysis 22 (1‐12), 224-229, 1994
XPS/AFM study of the PET surface modified by oxygen and carbon dioxide plasmas: Al/PET adhesion
QT Le, JJ Pireaux, R Caudano, P Leclere, R Lazzaroni
Journal of adhesion science and technology 12 (9), 999-1023, 1998
XPS study of the PET film surface modified by CO2 plasma: Effects of the plasma parameters and ageing
QT Le, JJ Pireaux, R Caudano
Journal of adhesion science and technology 11 (5), 735-751, 1997
Removal of post-etch photoresist and sidewall residues using organic solvent and additive combined with physical forces
QT Le, M Claes, T Conard, E Kesters, M Lux, G Vereecke
Microelectronic engineering 86 (2), 181-185, 2009
Effect of UV irradiation on modification and subsequent wet removal of model and post-etch fluorocarbon residues
QT Le, JF de Marneffe, T Conard, I Vaesen, H Struyf, G Vereecke
Journal of The Electrochemical Society 159 (3), H208, 2011
Feasibility study of fully self aligned vias for 5nm node BEOL
G Murdoch, J Bömmels, CJ Wilson, KB Gavan, QT Le, Z Tőkei, W Clark
2017 IEEE International Interconnect Technology Conference (IITC), 1-4, 2017
Sealing of Porous Low-k Dielectrics: Ellipsometric Porosimetry Study of Oxidized Films
CM Whelan, QT Le, F Cecchet, A Satta, JJ Pireaux, P Rudolf, K Maex
Electrochemical and solid-state letters 7 (2), F8, 2003
X-ray photoelectron spectroscopy and atomic force microscopy investigation of stability mechanism of tris-(8-hydroxyquinoline) aluminum-based light-emitting devices
QT Le, FM Avendano, EW Forsythe, L Yan, Y Gao, CW Tang
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 (4 …, 1999
Minimizing plasma damage and in situ sealing of ultralow-k dielectric films by using oxygen free fluorocarbon plasmas
G Mannaert, MR Baklanov, QT Le, Y Travaly, W Boullart, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
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