| Rise of silicene: A competitive 2D material J Zhao, H Liu, Z Yu, R Quhe, S Zhou, Y Wang, CC Liu, H Zhong, N Han, ... Progress in Materials Science 83, 24-151, 2016 | 815 | 2016 |
| Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations H Zhong, R Quhe, Y Wang, Z Ni, M Ye, Z Song, Y Pan, J Yang, L Yang, ... Scientific reports 6 (1), 21786, 2016 | 295 | 2016 |
| Many-body effect, carrier mobility, and device performance of hexagonal arsenene and antimonene Y Wang, P Huang, M Ye, R Quhe, Y Pan, H Zhang, H Zhong, J Shi, J Lu Chemistry of Materials 29 (5), 2191-2201, 2017 | 262 | 2017 |
| Monolayer phosphorene–metal contacts Y Pan, Y Wang, M Ye, R Quhe, H Zhong, Z Song, X Peng, D Yu, J Yang, ... Chemistry of Materials 28 (7), 2100-2109, 2016 | 212 | 2016 |
| Does p-type ohmic contact exist in WSe 2–metal interfaces? Y Wang, RX Yang, R Quhe, H Zhong, L Cong, M Ye, Z Ni, Z Song, J Yang, ... Nanoscale 8 (2), 1179-1191, 2016 | 189 | 2016 |
| Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors Z Ni, H Zhong, X Jiang, R Quhe, G Luo, Y Wang, M Ye, J Yang, J Shi, J Lu Nanoscale 6 (13), 7609-7618, 2014 | 184 | 2014 |
| Interlayer interactions in anisotropic atomically thin rhenium diselenide H Zhao, J Wu, H Zhong, Q Guo, X Wang, F Xia, L Yang, P Tan, H Wang Nano Research 8, 3651-3661, 2015 | 179 | 2015 |
| Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayer distorted diamond-chain structures and HX Zhong, S Gao, JJ Shi, L Yang Physical Review B 92 (11), 115438, 2015 | 156 | 2015 |
| Graphdiyne–metal contacts and graphdiyne transistors Y Pan, Y Wang, L Wang, H Zhong, R Quhe, Z Ni, M Ye, WN Mei, J Shi, ... Nanoscale 7 (5), 2116-2127, 2015 | 109 | 2015 |
| Electronic and mechanical properties of few-layer borophene H Zhong, K Huang, G Yu, S Yuan Physical Review B 98 (5), 054104, 2018 | 105 | 2018 |
| Strain-induced semiconductor to metal transition in bilayers (; ; ) H Zhong, W Xiong, P Lv, J Yu, S Yuan Physical Review B 103 (8), 085124, 2021 | 96 | 2021 |
| Highly Conducting, n-Type Bi12O15Cl6 Nanosheets with Superlattice-like Structure Y Myung, F Wu, S Banerjee, A Stoica, H Zhong, SS Lee, J Fortner, L Yang, ... Chemistry of Materials 27 (22), 7710-7718, 2015 | 60 | 2015 |
| Origin of 3.45 eV emission line and yellow luminescence band in GaN nanowires: surface microwire and defect P Huang, H Zong, J Shi, M Zhang, X Jiang, H Zhong, Y Ding, Y He, J Lu, ... ACS nano 9 (9), 9276-9283, 2015 | 46 | 2015 |
| Band Gap Opening of Graphene by Forming Heterojunctions with the 2D Carbonitrides Nitrogenated Holey Graphene, g-C3N4, and g-CN: Electric Field Effect X Cao, J Shi, M Zhang, X Jiang, H Zhong, P Huang, Y Ding, M Wu The Journal of Physical Chemistry C 120 (20), 11299-11305, 2016 | 45 | 2016 |
| Tunability of multiple ultraflat bands and effect of spin-orbit coupling in twisted bilayer transition metal dichalcogenides Z Zhan, Y Zhang, P Lv, H Zhong, G Yu, F Guinea, JÁ Silva-Guillén, ... Physical Review B 102 (24), 241106, 2020 | 37 | 2020 |
| Effects of out-of-plane strains and electric fields on the electronic structures of graphene/MTe (M= Al, B) heterostructures D Zhang, Y Hu, H Zhong, S Yuan, C Liu Nanoscale 11 (29), 13800-13806, 2019 | 35 | 2019 |
| Tellurium nanowire gate-all-around MOSFETs for sub-5 nm applications Y Yin, Z Zhang, H Zhong, C Shao, X Wan, C Zhang, J Robertson, Y Guo ACS Applied Materials & Interfaces 13 (2), 3387-3396, 2021 | 34 | 2021 |
| Silicene on substrates: A theoretical perspective HX Zhong, RG Quhe, YY Wang, JJ Shi, J Lü Chinese Physics B 24 (8), 087308, 2015 | 34 | 2015 |
| Anomalous light emission and wide photoluminescence spectra in graphene quantum dot: quantum confinement from edge microstructure P Huang, J Shi, M Zhang, X Jiang, H Zhong, Y Ding, X Cao, M Wu, J Lu The journal of physical chemistry letters 7 (15), 2888-2892, 2016 | 30 | 2016 |
| Electronic properties and quasiparticle model of monolayer Z Wang, X Kuang, G Yu, P Zhao, H Zhong, S Yuan Physical Review B 104 (15), 155110, 2021 | 21 | 2021 |
