| Systematic study of structural, electronic, and optical properties of atomic-scale defects in the two-dimensional transition metal dichalcogenides (, W … S Haldar, H Vovusha, MK Yadav, O Eriksson, B Sanyal Physical Review B 92 (23), 235408, 2015 | 162 | 2015 |
| Ionic Sieving Through One‐Atom‐Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing RD Nikam, J Lee, W Choi, W Banerjee, M Kwak, M Yadav, H Hwang Small 17 (44), 2103543, 2021 | 13 | 2021 |
| High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer M Yadav, A Kashir, S Oh, RD Nikam, H Kim, H Jang, H Hwang Nanotechnology 33 (085206), 1-10, 2021 | 2 | 2021 |
| Hf1-xZrxO2/ZrO2 nanolaminate thin film as a high-κ dielectric A Kashir, MG Farahani, S Kamba, M Yadav, H Hwang ACS Applied Electronic Materials 3 (12), 5632–5640, 2021 | 1 | 2021 |
| Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf0.5Zr0.5O2/TiN device H Kim, A Kashir, H Jang, S Oh, M Yadav, S Lee, H Hwang Nano Express, 2022 | | 2022 |
| Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing R Dnyandeo Nikam, J Lee, W Choi, W Banerjee, M Kwak, M Yadav, ... arXiv e-prints, arXiv: 2109.14935, 2021 | | 2021 |
Hyunsang HwangPOSTECH, KoreaVerified email at postech.ac.kr
